SMD10P06

SMD10P06 P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –60 rDS(on) (W) 0.28 @ VGS = 10 V TO-252 IDa (A) "10 S G Drain Connected to Tab GD S Top View Order Number: SMD10P06 D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb TC = 25_C TC = 100_C Pulsed Drain Current (maximum current limited by package) Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 –10 –5.7 –16 –2.0 42 2.0b –55 to 175 Unit V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Junction-to-Ambient Free Airb Junction-to-Case RthJA RthJC 60 _C/W 3.0 Notes: a. Calculated Rating for TC = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1480. Siliconix S-46848—Rev. B, 26-Feb-96 1 SMD10P06 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Res...