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PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie
20.0±0.5Product lifecyclennuaen 2.5 Solder Dip
Power
Transistors
2SC4111
Silicon
NPN triple diffusion planar type
For horizontal deflection output
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1500 1500 700
7 22 10 3.5 150 3.5
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V V A A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time
VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT tstg tf
VCB = 750V, IE = 0 VCB = 1500V, IE = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 2.5A IC = 7A, IB = 2.5A VCE = 10V, IC = 1A, f = 0.5MHz IC = 6A, Lleak = 5µH, IB1 = 1.7A, IB2 = –1.7A
1.5
10.0
2...
