Document
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4585
DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor
PINNING PIN 1 2 3
DESCRIPTION Base Collector Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO IC
Emitter-base voltage Collector current
ICM Collector current-peak
IB Base current
IBM Base current-peak
PC Collector power dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE 1200 800 7 10 20 4 8 85 150
-55~150
UNIT V V V A A A A W
MAX 1.47
UNIT /W
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4585
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=1 A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1 A
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;IB=0
IEBO Emitter cut-off current
At rated voltage
ICBO Collector cut-off current ICEO Collector cut-off current
At rated voltage
hFE-1
DC current gain
IC=5 A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Switching times
ton Turn-on time tstg Storage time tf Fall time
IC=5A;RL=50B IB1=1A; IB2=2A VBB2=4V
MIN TYP. MAX UNIT 1.0 V 1.5 V
800 V 0.1 mA
0.1 mA
8 7
8
MHz
0.5 µs 3.5 µs 0.3 µs
2
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4585
Fig.2 Outline dimensions 3
.