DatasheetsPDF.com

IRF644NL Dataheets PDF



Part Number IRF644NL
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF644NL DatasheetIRF644NL Datasheet (PDF)

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.240 I2PAK (TO-262) TO-220 D S D G D2PAK (TO-263) S D G G GD S S N-Channel MOSFET FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Le.

  IRF644NL   IRF644NL



Document
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.240 I2PAK (TO-262) TO-220 D S D G D2PAK (TO-263) S D G G GD S S N-Channel MOSFET FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package TO-220 D2PAK (TO-263) Lead (Pb)-free IRF644NPbF SiHF644N-E3 IRF644NSPbF SiHF644NS-E3 SnPb IRF644N SiHF644N Note a. See device orientation. IRF644NS SiHF644NS D2PAK (TO-263) IRF644NSTRLPbFa SiHF644NSTL-E3a IRF644NSTRLa SiHF644NSTLa D2PAK (TO-263) IRF644NSTRRPbFa SiHF644NSTR-E3a IRF644NSTRRa SiHF644NSTRa I2PAK (TO-262) IRF644NLPbF SiHF644NL-E3 IRF644NL SiHF644NL * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91038 S-83000-Rev. A, 19-Jan-09 www.vishay.com 1 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VGS ID IDM Single Pulse Avalanche Energyb Avalanche Current Repetitive Avalanche Energy EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω, IAS = 8.4 A (see fig. 12). c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6.


IRF644NS IRF644NL IRLR8103


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)