Document
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250 V
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
54
Qgs (nC)
9.2
Qgd (nC)
26
Configuration
Single
0.240
I2PAK (TO-262)
TO-220
D
S D G
D2PAK (TO-263)
S D G
G
GD S
S N-Channel MOSFET
FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
Lead (Pb)-free
IRF644NPbF SiHF644N-E3
IRF644NSPbF SiHF644NS-E3
SnPb
IRF644N SiHF644N
Note a. See device orientation.
IRF644NS SiHF644NS
D2PAK (TO-263) IRF644NSTRLPbFa SiHF644NSTL-E3a IRF644NSTRLa SiHF644NSTLa
D2PAK (TO-263) IRF644NSTRRPbFa SiHF644NSTR-E3a IRF644NSTRRa SiHF644NSTRa
I2PAK (TO-262) IRF644NLPbF SiHF644NL-E3 IRF644NL SiHF644NL
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91038 S-83000-Rev. A, 19-Jan-09
www.vishay.com 1
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VGS ID IDM
Single Pulse Avalanche Energyb Avalanche Current Repetitive Avalanche Energy
EAS IAR EAR
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω, IAS = 8.4 A (see fig. 12). c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6.