Power MOSFET
Power MOSFET
IRL520, SiHL520
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
12
...
Description
Power MOSFET
IRL520, SiHL520
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
12
Qgs (nC)
3.0
Qgd (nC)
7.1
Configuration
Single
D
TO-220AB
0.27
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRL520PbF SiHL520-E3 IRL520 SiHL520
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 5.0 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Sold...
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