www.vishay.com
IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100
VGS = 5.0 V 12
0.27
3.0
7.1
Single
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRLR120, SiHLR120)
• Straight lead (IRLU120, SiHLU120)
• Available in tape and reMel • Logic-level gate drive
Available
• RDS(on) specified at VGS = 4 V and 5 V
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free
SiHLR120-GE3 IRLR120PbF-BE3
Lead (Pb)-free
IRLR120PbF
Note a. See device orientation
DPAK (TO-252) SiHLR120TRL-GE3 IRLR120TRLPbF-BE3 IRLR120TRLPbF a
DPAK (TO-252) SiHLR120TR-GE3 IRLR120TRPbF-BE3 IRLR120TRPbF a
DPAK (TO-252) SiHLR120TRR-GE3 IRLR120TRRPbF a
IPAK (TO-251) SiHLU120-GE3 -
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at 5 V
TC = 25 °C TC = 100 °C
ID
IDM
Linear derating factor (PCB mount) e
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12) c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case e. When mounted on 1" square PCB (FR-4 or G-10 material)
LIMIT 100 ± 10 7.7 4.9 31 0.33 0.020 210 7.7 4.2 42 2.5 5.5
-55 to +150 260
UNIT V
A
W/°C mJ A mJ W V/ns °C
S21-0818-Rev. F, 02-Aug-2021
1
Document Number: 91324
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-ambient (PCB mount) a
.