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IRLU120 Dataheets PDF



Part Number IRLU120
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRLU120 DatasheetIRLU120 Datasheet (PDF)

www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 12 0.27 3.0 7.1 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRLR120, SiHLR120) • Straight lead (IRLU120, SiHLU120) • Available in tape and reMel • Logic-level gate drive Available • RDS(on) s.

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www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 12 0.27 3.0 7.1 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRLR120, SiHLR120) • Straight lead (IRLU120, SiHLU120) • Available in tape and reMel • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHLR120-GE3 IRLR120PbF-BE3 Lead (Pb)-free IRLR120PbF Note a. See device orientation DPAK (TO-252) SiHLR120TRL-GE3 IRLR120TRLPbF-BE3 IRLR120TRLPbF a DPAK (TO-252) SiHLR120TR-GE3 IRLR120TRPbF-BE3 IRLR120TRPbF a DPAK (TO-252) SiHLR120TRR-GE3 IRLR120TRRPbF a IPAK (TO-251) SiHLU120-GE3 - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 5 V TC = 25 °C TC = 100 °C ID IDM Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12) c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case e. When mounted on 1" square PCB (FR-4 or G-10 material) LIMIT 100 ± 10 7.7 4.9 31 0.33 0.020 210 7.7 4.2 42 2.5 5.5 -55 to +150 260 UNIT V A W/°C mJ A mJ W V/ns °C S21-0818-Rev. F, 02-Aug-2021 1 Document Number: 91324 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Maximum junction-to-ambient (PCB mount) a .


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