Power MOSFET
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qg...
Description
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
220 64 110 Single
0.16
D
SUPER-247TM
G
S D G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
Low Gate Charge Qg Results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
Fully Characterized Capacitance and Avalanche Voltage and Current
Lead (Pb)-free Available
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching
Super-247TM IRFPS30N60KPbF SiHFPS30N60K-E3 IRFPS30N60K SiHFPS30N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 1.1 mH, RG = 25 Ω, IAS = 30 A. c. ISD ≤ 30 A, dI/dt ≤ 630 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case.
* Pb containing terminations are not ...
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