Power MOSFET. IRFIB7N50LPbF Datasheet

IRFIB7N50LPbF MOSFET. Datasheet pdf. Equivalent

IRFIB7N50LPbF Datasheet
Recommendation IRFIB7N50LPbF Datasheet
Part IRFIB7N50LPbF
Description Power MOSFET
Feature IRFIB7N50LPbF; PD - 95750 IRFIB7N50LPbF SMPS MOSFET HEXFET® Power MOSFET Applications • Zero Voltage Switching.
Manufacture International Rectifier
Datasheet
Download IRFIB7N50LPbF Datasheet




International Rectifier IRFIB7N50LPbF
PD - 95750
IRFIB7N50LPbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
Zero Voltage Switching SMPS
VDSS RDS(on) typ. Trr typ. ID
Telecom and Server Power Supplies
Uninterruptible Power Supplies
500V 320m85ns 6.8A
Motor Control applications
Lead-Free
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise
immunity.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
6.8
4.3
27
46
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.37
±30
24
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x10lb in (1.1N m)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 6.8
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 27
––– ––– 1.5
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 6.8A, VGS = 0V
trr Reverse Recovery Time
f––– 85 130 ns TJ = 25°C, IF = 6.8A
––– 130 200
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 280 420 nC TJ = 25°C, IS = 6.8A, VGS = 0V
f––– 570 860
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 5.9 8.9 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Document Number: 91177
8/23/04
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International Rectifier IRFIB7N50LPbF
IRFIB7N50LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
IGSS
RG
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
500
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.44
0.32
–––
–––
–––
–––
–––
0.88
Max.
–––
–––
0.38
5.0
50
2.0
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
fV/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.1A
V VDS = VGS, ID = 250µA
µA VDS = 500V, VGS = 0V
mA VDS = 400V, VGS = 0V, TJ = 125°C
nA VGS = 30V
VGS = -30V
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Coss eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
Min.
4.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
23
36
47
19
2220
230
23
2780
63
140
100
Max.
–––
92
24
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
S VDS = 50V, ID = 4.1A
ID = 6.8A
fnC VDS = 400V
VGS = 10V, See Fig. 7 & 16
VDD = 250V
ns ID = 6.8A
fRG = 9.0
VGS = 10V, See Fig. 11a & 11b
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
gVGS = 0V,VDS = 0V to 400V
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
dParameter
Single Pulse Avalanche Energy
ÙAvalanche Current
™Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
550
6.8
4.6
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.69
65
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 12).
‚ Starting TJ = 25°C, L = 24mH, RG = 25,
IAS = 6.8A, (See Figure 14).
ƒ ISD 6.8, di/dt 650A/µs, VDD V(BR)DSS,
dv/dt = 24V/ns, TJ 150°C.
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
Document Number: 91177
www.vishay.com
2



International Rectifier IRFIB7N50LPbF
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
0.1
0.01
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFIB7N50LPbF
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
5.0V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 175°C
1 TJ = 25°C
VDS = 50V
60µs PULSE WIDTH
0.1
3456789
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Document Number: 91177
3.0
ID = 6.8A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
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