Power MOSFET. IRFIB7N50L Datasheet

IRFIB7N50L MOSFET. Datasheet pdf. Equivalent

IRFIB7N50L Datasheet
Recommendation IRFIB7N50L Datasheet
Part IRFIB7N50L
Description Power MOSFET
Feature IRFIB7N50L; IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max..
Manufacture Vishay
Datasheet
Download IRFIB7N50L Datasheet




Vishay IRFIB7N50L
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
92
24
44
Single
0.320
TO-220 FULLPAK
D
G
GDS
ORDERING INFORMATION
Package
Lead (Pb)-free
S
N-Channel MOSFET
FEATURES
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Reqirements
RoHS
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
TO-220 FULLPAK
IRFIB7N50LPbF
SiHFIB7N50L-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 14).
c. ISD 6.8 A, dI/dt 650 A/µs, VDD VDS, dV/dt = 24 V/ns, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
6.8
4.3
27
0.37
550
6.8
4.6
46
24
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
www.vishay.com
1



Vishay IRFIB7N50L
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
2.69
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.1 Ab
VDS = 50 V, ID = 4.1 A
500 -
-V
- 0.44 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 µA
- - 2.0 mA
-
0.32 0.38
Ω
4.7 -
-S
Ciss
Coss
Crss
Coss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
-
-
-
-
-
-
-
2220
230
23
2780
63
140
100
-
-
-
-
-
-
-
pF
Total Gate Charge
Gate-Source Charge
Qg - - 92
Qgs
VGS = 10 V
ID = 6.8 A, VDS = 400 V,
see fig. 7 and 16b
-
- 24 nC
Gate-Drain Charge
Qgd
- - 44
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
RG
td(on)
tr
td(off)
tf
f = 1 MHz, open drain
- 0.88 -
- 23 -
VGS = 10 V
VDD = 250 V, ID = 6.8 A,
RG = 9.0 Ω,
see fig. 11a and 11bb
-
-
36
47
-
-
- 19 -
Ω
ns
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
D
Pulsed Diode Forward Currenta
Body Diode Voltage
ISM
integral reverse
p - n junction diode
G
S
VSD TJ = 25 °C, IS = 6.8 A, VGS = 0 Vb
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 6.8 A,
TJ = 125 °C, dI/dt = 100 A/µsb
- - 6.8
A
- - 27
- - 1.5 V
- 85 130
ns
- 130 200
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IS = 6.8 A,
TJ = 125 °C, dI/dt = 100 A/µsb
- 280 420
nC
- 570 860
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Current
IRRM
TJ = 25 °C
-
5.9 8.9
A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91177
S09-0063-Rev. A, 02-Feb-09



Vishay IRFIB7N50L
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
5.0V
0.1
0.01
0.1
≤60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 1 - Typical Output Characteristics
100
10 TJ = 150 °C
1 TJ = 25 °C
VDS = 50 V
≤ 60 μs PULSE WIDTH
0.1
3456789
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
5.0V
0.1
0.1
≤60μs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 2 - Typical Output Characteristics
3.0
ID = 6.8A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
www.vishay.com
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