High-speed diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
1PS193 High-speed diode
Product specification Supersedes data...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
1PS193 High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 11
Philips Semiconductors
Product specification
High-speed diode
FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 80 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA.
2 1
1PS193
DESCRIPTION The 1PS193 is a high-speed switching diode, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode
APPLICATIONS High-speed switching in e.g. surface mounted circuits.
3 Top view Marking code: F3T.
MAM085
2 n.c. 3
1
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge t = 1 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − −65 − 4 0.5 250 +150 150 A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 85 80 215 500 V V mA mA UNIT
1996 Sep 11
2
Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERIS...
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