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1PS59SB10 Dataheets PDF



Part Number 1PS59SB10
Manufacturers NXP
Logo NXP
Description Schottky barrier (double) diodes
Datasheet 1PS59SB10 Datasheet1PS59SB10 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D114 1PS59SB10 series Schottky barrier (double) diodes Product specification 1996 Sep 20 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES • Low forward voltage • Guard ring protected • Small SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION page 1PS59SB10 series PINNING 1PS59SB. . PIN 10 1 2 3 a n.c. k 14 a1 k2 k1, a2 15 a1 a2.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D114 1PS59SB10 series Schottky barrier (double) diodes Product specification 1996 Sep 20 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES • Low forward voltage • Guard ring protected • Small SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION page 1PS59SB10 series PINNING 1PS59SB. . PIN 10 1 2 3 a n.c. k 14 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.3 3 3 1 2 MLC358 1PS59SB14 diode configuration (symbol). 3 Planar Schottky barrier diodes encapsulated in a SC59 small plastic SMD package. Single diodes and double diodes with different pinning are available. MARKING TYPE NUMBER 1PS59SB10 1PS59SB14 1PS59SB15 1PS59SB16 MARKING CODE 10 14 15 16 1 Top view 2 MSA314 1 2 MLC359 Fig.1 Simplified outline (SC59) and pin configuration. Fig.4 1PS59SB15 diode configuration (symbol). 3 1 2 n.c. MLC357 3 1 2 MLC360 Fig.2 1PS59SB10 single diode configuration (symbol). Fig.5 1PS59SB16 diode configuration (symbol). 1996 Sep 20 2 Philips Semiconductors Product specification Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Ptot Tstg Tj continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms Tamb ≤ 25 °C PARAMETER CONDITIONS 1PS59SB10 series MIN. MAX. UNIT − − − − − −65 − 30 200 300 600 250 +150 125 V mA mA mA mW °C °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.6 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR trr reverse current reverse recovery time VR = 25 V; see Fig.7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.9 f = 1 MHz; VR = 1 V; see Fig.8 240 320 400 500 800 2 5 mV mV mV mV mV µA ns PARAMETER CONDITIONS MAX. UNIT Cd diode capacitance 10 pF THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC59 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W 1996 Sep 20 3 Philips Semiconductors Product specification Schottky barrier (double) diodes GRAPHICAL DATA 1PS59SB10 series MSA892 3 10 handbook, halfpage 10 3 IR (µA) 10 2 (2) (1) MSA893 IF (mA) 10 2 (1) (2) (3) 10 10 1 (1) (2) (3) 1 (3) 10 1 10 1 0 0.4 0.8 VF (V) 1.2 0 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 10 20 VR (V) 30 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Forward current as a function of forward voltage; typical values. Fig.7 Reverse current as a function of reverse voltage; typical values. 15 Cd (pF) MSA891 handbook, halfpage I F 10 dI F dt 5 10% t Qr 90% 0 0 10 20 V R (V) 30 IR tf MRC129 - 1 f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Reverse recovery definitions. 1996 Sep 20 4 Philips Semiconductors Product specification Schottky barrier (double) diodes PACKAGE OUTLINE 1PS59SB10 series handbook, full pagewidth 0.2 M A 0.50 0.35 1.65 1.25 0.100 0.013 1.3 1.0 3 A 3.0 2.5 1.7 1.3 1 2.1 1.7 3.1 2.7 2 0.6 0.2 0.26 0.10 MSA313 - 1 Dimensions in mm. Fig.10 SC59. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 20 5 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. .


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