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Schottky Diode. MBR4040CT Datasheet |
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Data Sheet
Customer：
Product :
Part No.:
Issued Date:
High Power Schottky Diode
MBR4040CT/MBR4060CT/MBR40100CT/MBR40150CT
MBR40200CT/MBR0250CT
11-Jan-11
Edition :
REV.A
VIKING TECH CORPORATION
光頡科技股份有限公司
VIKING TECH CORPORATION KAOHSIUNG BRANCH WUXI TMTEC CO., LTD.
光頡科技股份有限公司高雄分公司
無錫泰銘電子有限公司
No.70, Kuanfu N. Rad.,
Hsin Chu Industrial Park,
Hukou Hsiang, Hsin Chu Hsien,
303, Taiwan
TEL:886-3-5972931
FAX:886-3-5972935•886-3-5973494
E-mail:sales@viking.com.tw
No.248-3, Sin-Sheng Rd., Cian-Jhen Dist., Kaohsiung,
806, Taiwan
TEL:886-7-8217999
FAX:886-7-8228229
E-mail:sales@viking.com.tw
No.1A,(Xixia Road),Machinery & Industry Park,
National Hi-Tech Industrial Development Zone of
Wuxi, Wuxi, Jiangsu Province, China
Zip Code:214028
TEL:86-510-85203339
FAX:86-510-85203667•86-510-85203977
E-mail:wuxisales@tmtec.com.tw
Produced by
(QC)
11-Jan-11
Kris
Checked
(QC)
11-Jan-11
Ann
Approved by
(QC)
11-Jan-11
J.C Liu
Prepared by
(Sales)
11-Jan-11
Accepted by
(Customer)
Tel: +886-3-597-2931／Fax: +886-3-597-2935
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
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40 Amperes High Power Schottky Barrier Rectifiers
Voltage : 40 to 250Volts
■Features
－For use in low voltage, high frequency inverters, free wheeling and polarity protection applications
－Low power loss, high efficiency
－High current capability, low forward voltage drop
－High surge capability
－Guardring for overvoltage protection
－Ultra high-speed switching
－Silicon epitaxial planar chip, metal silicon junction
－Lead-free parts meet environmental standards of MIL-STD-19500/228
■Mechanical Data
Epoxy : UL94-V0 rated flame retardant
Case：JEDEC TO-220AB molded plastic body over passivated chip
Lead :Axial lead, solderable per MIL-STD-202, Method 208 guranteed
Polarity：Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 2.25 gram
Packaging : 50pcs per Tube
▓Package Dimensions in inches(millimeters): TO-220AB
▓Maximum Ratings And Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbol
MBR4040CT
MBR4060CT
MBR40100CT
MBR40150CT
MBR40200CT
Marking Code
MBR4040CT
MBR4060CT
MBR40100CT
MBR40150CT
MBR40200CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage@20A, TA=25℃
@20A, TA=125℃
@40A, TA=25℃
VRRM
VRMS
VDC
VF
40
28
40
0.70
0.57
0.84
60
42
60
0.79
0.70
0.95
100
70
100
0.81
0.71
0.95
150
105
150
0.87
0.77
1.0
200
140
200
0.90
0.80
1.0
Operating Temperature
TJ
-50 ~ +150
MBR40250CT
MBR40250CT
250
175
250
0.95
0.85
-
Unit
V
V
V
V
℃
Parameter
Forward Rectified Current
Forward Surge Current
Reverse Current
Thermal Resistance
Diode Junction Capacitance
Storage Temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR=VRRM , TA=25℃
VR=VRRM , TA=125℃
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
IR
RΘJA
CJ
TSTG
Min.
-50
Typ.
30
150
Max.
40
300
0.1
10
+150
Unit
A
A
mA
℃/W
pF
℃
Tel: +886-3-597-2931／Fax: +886-3-597-2935
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
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▓Rated and Characteristic Curve
Tel: +886-3-597-2931／Fax: +886-3-597-2935
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
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