FLC057WG

FLC057WG FEATURES High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package C-Band Power GaAs FET DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Channel Temperature Tstg Tch Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Rating 15 -5 3.75 -65 to +175 175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Test Conditions Min. Saturated Drain Current Transconductance IDSS gm VDS = 5V, VGS = 0V VDS = 5V, IDS = 125mA - Pinch-off Voltage Vp Gate Source Breakdown Voltage VGSO VDS = 5V, IDS =10mA IGS = -10µA -1.0 -5 Limit Typ. Max. 200 300 100 - -2.0 -3.5 -- Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. P1dB ...