FLU35ZME1

FLU35ZME1 FEATURES ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SUMITOMO’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Soutce Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 20.8 -55 to +150 150 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS < 10 Forward Gate Current IGF < 19.4 Reverse Gate Current IGR > -2.0 Gate Resistance Rg 100 Unit V mA mA ohm Channel Temperature Tch < 145 deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans Conductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO Test Conditions VDS=5V,VGS=0V VDS=5V,IDS=800mA VDS=5V,IDS=60mA IGS=-60mA Min. - -1.0 -5 Limit Typ. 1200 600 -2.0 - Max. 1800 -3.5 - Unit mA mS V V Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. P1dB G1dB VDS=10V f=2.0GHz IDS=0.6IDSS(Typ.) 34.5 35.5 - dBm 1...