GaAs FET. FLU35ZME1 Datasheet

FLU35ZME1 FET. Datasheet pdf. Equivalent

FLU35ZME1 Datasheet
Recommendation FLU35ZME1 Datasheet
Part FLU35ZME1
Description L-Band Medium & High Power GaAs FET
Feature FLU35ZME1; FLU35ZME1 FEATURES ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost P.
Manufacture SUMITOMO
Datasheet
Download FLU35ZME1 Datasheet




SUMITOMO FLU35ZME1
FLU35ZME1
FEATURES
High Output Power: P1dB=35.5dBm(typ.)
High Gain: G1dB=11.5dB(typ.)
Low Cost Plastic(SMT) Package
Tape and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35ZME1 is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
SUMITOMO’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Drain-Source Voltage
Gate-Soutce Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Rating
15
-5
20.8
-55 to +150
150
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C)
Item
Symbol
Condition
DC Input Voltage VDS < 10
Forward Gate Current
IGF
< 19.4
Reverse Gate Current
IGR
> -2.0
Gate Resistance
Rg 100
Unit
V
mA
mA
ohm
Channel Temperature
Tch
< 145
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Drain Current
Trans Conductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Symbol
IDSS
gm
Vp
VGSO
Test Conditions
VDS=5V,VGS=0V
VDS=5V,IDS=800mA
VDS=5V,IDS=60mA
IGS=-60mA
Min.
-
-
-1.0
-5
Limit
Typ.
1200
600
-2.0
-
Max.
1800
-
-3.5
-
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V
f=2.0GHz
IDS=0.6IDSS(Typ.)
34.5 35.5 - dBm
10.5 11.5 - dB
Thermal Resistance
Rth Channel to Case
- 5 6 deg.C/W
Note1: Product supplied to this specification are 100% DC performance tested.
G.C.P.:Gain Compression Point
Note2:The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class III
2000 V min.
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kohm)
RoHS COMPLIANCE Yes
Edition 1.2
Aug. 2014
1



SUMITOMO FLU35ZME1
Edition 1.2
Aug. 2014
FLU35ZME1
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
25
20
15
10
5
0
0 50 100 150 200
Case Temperature[ deg.C ]
TUNING CONDITION : f=2.0GHz, FINE TUNED
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
f=2.0GHz VDS=10V IDS=0.6IDSS
40 100
38
36 80
34
Pout
32
60
30
28 40
26
24
ηadd
20
22
20 0
10 12 14 16 18 20 22 24 26 28
Input Power dBm
2



SUMITOMO FLU35ZME1
FLU35ZME1
L-Band Medium & High Power GaAs FET
TUNING CONDITION : WIDE BAND TUNED
OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER
@ VDS=10V IDS(DC)=0.6IDSS
Pin -Po u t @ f=1.8GHz
40 700
35 650
30 600
25 550
20 500
15 450
6 8 10 12 14 16 18 20 22 24 26 28 30
In p u t Po w e r [d Bm ]
Pout
Ids [m A]
P .A .E.
75
50
25
0
Pin -Po u t @ f=2.0GHz
40 700
35 650
30 600
25 550
20 500
15 450
6 8 10 12 14 16 18 20 22 24 26 28 30
In p u t Po w e r [d Bm ]
Pout
Ids [m A]
P.A .E.
75
50
25
0
Pin-Pout @ f=2.2GHz
40 700
35 650
30 600
25 550
20 500
15 450
6 8 10 12 14 16 18 20 22 24 26 28 30
Input Pow er [dBm ]
Pout
Ids[m A]
P.A.E.
75
50
25
0
OUTPUT POWER vs. FREQUENCY
40
35
30
25
20
15
1.7
1.9 2.1
Fr e q u e n cy [GHz ]
Pin =10d Bm
Pin =25d Bm
Pin =15d Bm
Pin =28d Bm
2.3
Pin =20d Bm
P1dB
Edition 1.2
Aug. 2014
3







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