GaAs FET. FLC097WF Datasheet

FLC097WF FET. Datasheet pdf. Equivalent

FLC097WF Datasheet
Recommendation FLC097WF Datasheet
Part FLC097WF
Description C-Band Power GaAs FET
Feature FLC097WF; FEATURES • High Output Power: P1dB = 28.8dBm (Typ.) • High Gain: G1dB = 8.5dB(Typ.) • High PAE: ηadd.
Manufacture Eudyna Devices
Datasheet
Download FLC097WF Datasheet




Eudyna Devices FLC097WF
FEATURES
• High Output Power: P1dB = 28.8dBm (Typ.)
• High Gain: G1dB = 8.5dB(Typ.)
• High PAE: ηadd = 35%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLC097WF
C-Band Power GaAs FET
DESCRIPTION
The FLC097WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
+15
-5
4.16
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 200mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =15mA
IGS = -15µA
-1.0
-5
Limit
Typ. Max.
300 450
150 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6 GHz
27.5 28.8 -
7.5 8.5 -
Power-added Efficiency
ηadd
- 35 -
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: WF
Rth Channel to Case
- 25 36
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1



Eudyna Devices FLC097WF
FLC097WF
C-Band Power GaAs FET
POWER DERATING CURVE
5
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
4
3
2
1
0 50 100 150 200
Case Temperature (°C)
300 VGS =0V
-0.5V
200
-1.0V
100 -1.5V
-2.0V
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER
& IM3 vs. INPUT POWER
VDS=10V
24 f1 = 6.0 GHz
22
f2 = 6.01GHz
2-tone Test
20 Pout
18
IM3
16
-10
-20
-30
-40
14 -50
6 8 10 12 14
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS=10V
4 GHz
28 IDS 0.6 IDSS
26
Pout 6 GHz
24
22
4 GHz
20 ηadd 6 GHz
18
16
50
40
30
20
10
10 12 14 16 18 20
Input Power (dBm)
P1dB & ηadd vs. VDS
f=6GHz
IDS 0.6 IDSS
29 P1dB
28
ηadd
27
50
40
30
8 9 10
Drain-Source Voltage (V)
2



Eudyna Devices FLC097WF
FLC097WF
C-Band Power GaAs FET
+j50
+j25
6
8
7
9
10
5
+j10
4
12
11
10
0
3
10 9
25
8
50100
7
-j10
2GHz
6
54 3
2GHz
+j100
11
12
250
+j250
-j250
-j25 -j100
-j50
S11 +90°
S22
2GHz
.08
.06
3
.04
180°
4 32
SCALE FOR |S21|
4
.02
5
1
2GHz
63
12
11 10
9
8
7
7
5
9
10
11
12
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
S-PARAMETERS
VDS = 10V, IDS = 180mA
S21 S12
MAG ANG
MAG ANG
S22
MAG ANG
500
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
.950 -61.4
.857 -151.4
.841 -176.1
.832 166.3
.825 148.7
.820 129.8
.817 112.1
.807 97.6
.804 83.6
.799 67.2
.794 47.0
.784 26.9
10.087
4.537
3.114
2.398
1.978
1.681
1.418
1.212
1.080
1.011
.954
.864
140.8
76.8
52.9
33.0
13.6
-6.3
-25.9
-43.2
-59.4
-76.6
-96.5
-117.0
.022 55.5
.038 7.0
.039 -6.0
.039 -13.1
.040 -19.6
.042 -26.4
.043 -34.9
.045 -36.2
.050 -40.8
.059 -45.9
.071 -55.4
.082 -66.9
.399 -31.1
.344 -83.9
.392 -102.2
.445 -115.6
.480 -127.7
.506 -142.2
.534 -158.6
.571 -172.0
.603 176.6
.620 165.2
.629 149.3
.649 130.8
3







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