GaAs FET. FLC257MH-6 Datasheet

FLC257MH-6 FET. Datasheet pdf. Equivalent

FLC257MH-6 Datasheet
Recommendation FLC257MH-6 Datasheet
Part FLC257MH-6
Description C-Band Power GaAs FET
Feature FLC257MH-6; FLC257MH-6 FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 9.0dB(Typ.) • Hig.
Manufacture Eudyna Devices
Datasheet
Download FLC257MH-6 Datasheet




Eudyna Devices FLC257MH-6
FLC257MH-6
FEATURES
• High Output Power: P1dB = 34.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: ηadd = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC257MH-6 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
15
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS =600mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS =50mA
-1.0
Gate Source Breakdown Voltage VGSO IGS = -50µA
-5
Limit
Typ. Max.
1000 1500
500 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6.4 GHz
32.5 34.0 -
8.0 9.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 36 -
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 8 10
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1



Eudyna Devices FLC257MH-6
FLC257MH-6
C-Band Power GaAs FET
POWER DERATING CURVE
16
12
8
4
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
1000
750
VGS =0V
-0.5V
500 -1.0V
250 -1.5V
-2.0V
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER
& IM3 vs. INPUT POWER
VDS=10V
29 f1 = 6.4 GHz
27
f2 = 6.41GHz
2-tone Test
25 Pout
23
21
IM3
-10
-20
-30
-40
19 -50
12 14 16 18 20
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS = +10V
35 IDS 0.6 IDSS
33 f = 6.4 GHz
Pout
31
29
27
25 ηadd
23
50
40
30
20
10
16 18 20 22 24 26
Input Power (dBm)
P1dB & ηadd vs. VDS
f=6.4 GHz
IDS 0.6 IDSS
35
50
34
P1dB
40
ηadd
33 30
8 9 10
Drain-Source Voltage (V)
2



Eudyna Devices FLC257MH-6
FLC257MH-6
C-Band Power GaAs FET
+j50
+j25
5GHz
5.5
+j10
88
7.5
7
0 6.5 7.5
6
5.5 5GHz
25
7
-j10
6
6.5
50
100
+j100
+j250
250
-j250
-j25 -j100
-j50
S11 +90°
S22
180°
6
5.5
5GHz 5
6 6.5
6.5
4 321
SCALE FOR |S21|
7
8 7.5
7
.02 8
7.5
.04
.06
.08
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
500
5000
5500
6000
6500
7000
7500
8000
.937 -142.8
.818 134.9
.729 120.3
.542 99.1
.166 67.8
.338 -148.2
.667 -177.6
.814 161.6
S-PARAMETERS
VDS = 10V, IDS = 600mA
S21 S12
MAG ANG
MAG
ANG
7.241
1.418
1.596
1.737
1.912
1.664
1.231
.810
109.5
91.8
85.8
64.9
50.3
20.5
-1.8
-16.0
.020 30.3
.029 86.1
.031 79.7
.038 69.2
.044 41.5
.042 5.6
.034 -25.6
.025 -44.4
S22
MAG
ANG
.351 -157.1
.719 -163.9
.751 -167.5
.800 -170.6
.839 -178.0
.856 172.9
.832 165.7
.825 160.9
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)