C-Band Power GaAs FET
FLC257MH-8
C-Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • Hi...
Description
FLC257MH-8
C-Band Power GaAs FET
FEATURES
High Output Power: P1dB = 34.0dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC257MH-8 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15 -5 15 -65 to +175 175
Unit
V V W °C °C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current Transconductance
IDSS gm
VDS = 5V, VGS = 0V VDS = 5V, IDS =600mA
-
Pinch-off Voltage
Vp VDS = 5V, IDS =50mA
-1.0
Gate Source Breakdown Voltage VGSO IGS = -50µA
-5
Limit Typ. Max. 1000 1500 500 -
-2.0 -3.5
--
Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P.
P1dB G1dB
...
Similar Datasheet