GaAs FET. FLC257MH-8 Datasheet

FLC257MH-8 FET. Datasheet pdf. Equivalent

FLC257MH-8 Datasheet
Recommendation FLC257MH-8 Datasheet
Part FLC257MH-8
Description C-Band Power GaAs FET
Feature FLC257MH-8; FLC257MH-8 C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1d.
Manufacture Eudyna Devices
Datasheet
Download FLC257MH-8 Datasheet




Eudyna Devices FLC257MH-8
FLC257MH-8
C-Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 34.0dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE: ηadd = 35%(Typ.)
• ProvenReliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC257MH-8 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
15
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS =600mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS =50mA
-1.0
Gate Source Breakdown Voltage VGSO IGS = -50µA
-5
Limit
Typ. Max.
1000 1500
500 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 8.5 GHz
32.5 34.0 -
7.0 8.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 35 -
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 8 10
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1



Eudyna Devices FLC257MH-8
FLC257MH-8
C-Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
16
12
8
4
0 50 100 150 200
Case Temperature (°C)
1000
750
VGS =0V
-0.5V
500 -1.0V
250 -1.5V
-2.0V
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER
& IM3 vs. INPUT POWER
VDS=10V
29 f1 = 8.5 GHz
27
f2 = 8.51GHz
2-tone Test
25 Pout
23
21 IM3
-10
-20
-30
-40
19 -50
12 14 16 18 20
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS = +10V
35 IDS 0.6 IDSS
33
f = 8.5 GHz
Pout
31
29
27
25 ηadd
23
50
40
30
20
10
17 19 21 23 25 27
Input Power (dBm)
P1dB & ηadd vs. VDS
f=8.5 GHz
IDS 0.6 IDSS
35
34 P1dB
ηadd
33
50
40
30
8 9 10
Drain-Source Voltage (V)
2



Eudyna Devices FLC257MH-8
FLC257MH-8
C-Band Power GaAs FET
+j50
+j25
6GHz
+j10
0
9
8.5
8
7.5
7
6.5
9
6GHz
6.5
7
7.5
25
8.5
8
50
100
+j100
+j250
250
-j10 -j250
-j25 -j100
-j50
S11 +90°
S22
180°
7 7.5 8
6GHz 7
6GHz
8
8.5 8.5
4 321
9
SCALE FOR |S21|
.02
9
.04
.06
.08
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
500
6000
6500
7000
7500
8000
8500
9000
9500
10000
.928 -142.8
.826 127.2
.770 114.2
.666 98.0
.485 78.9
.170 55.0
.243 -164.9
.561 170.0
.740 150.0
.828 134.3
S-PARAMETERS
VDS = 10V, IDS = 600mA
S21 S12
MAG ANG
MAG ANG
7.163
1.097
1.179
1.270
1.453
1.500
1.368
1.053
.758
.569
109.2
90.1
92.6
84.3
73.2
53.1
29.9
10.3
-1.9
-9.3
.021 28.8
.025 99.3
.026 98.5
.030 81.0
.035 67.7
.041 43.3
.042 14.0
.038 -12.0
.029 -29.6
.023 -40.1
S22
MAG
ANG
.344 -157.2
.778 -174.5
.798 -179.6
.834 175.7
.863 169.2
.894 162.7
.889 156.1
.874 150.6
.848 146.0
.846 143.4
3







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