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FLU17XM

Fujitsu

L-Band Medium & High Power GaAs FET


Description
FEATURES High Output Power: P1dB=32.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=46% (Typ.) Hermetic Metal/Ceramic (SMT) Package Tape and Reel Available FLU17XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series t...



Fujitsu

FLU17XM

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