FLU17ZME1

FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C) Item Drain-Source Voltage Symbol VDS Rating 15 Gate-Soutce Voltage VGS -5 Total Power Dissipation PT 8.3 Storage Temperature Tstg -55 to +150 Channel Temperature Tch 150 RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 deg.C) Unit V V W deg.C deg.C Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR Condition ≦10 ≦9.6 ≧-1.0 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C) Item Drain Current Trans Conductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO Test Conditions VDS=5V,VGS=0V VDS=5V,IDS=400mA VDS=5V,IDS=30mA IGS=-30µA Min. - -1.0 -5 Limit Typ. 600 300 -2.0 - Max. 900 -3.5 - Unit mA mS V V Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. P1dB G1dB VDS=10V f=2.0GHz IDS=0.6IDSS(Typ.) 31.5 32.5 - dBm 11.5 12.5 - dB Thermal Resistance Rth Channel to Case - 12 15 deg.C/W C...