GaAs FET. FLU35XM Datasheet

FLU35XM FET. Datasheet pdf. Equivalent

FLU35XM Datasheet
Recommendation FLU35XM Datasheet
Part FLU35XM
Description L-Band Medium & High Power GaAs FET
Feature FLU35XM; FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=4.
Manufacture Eudyna Devices
Datasheet
Download FLU35XM Datasheet




Eudyna Devices FLU35XM
FEATURES
• High Output Power: P1dB=35.5dBm (Typ.)
• High Gain: G1dB=12.5dB (Typ.)
• High PAE: ηadd=46% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
FLU35XM
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with
gate resistance of 100.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
15
-65 to +175
+175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Unit
Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
- 1200 1800
VDS = 5V, IDS = 800mA - 600 -
mA
mS
Pinch-Off Voltage
Vp VDS = 5V, IDS = 60mA -1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage VGSO IGS = -60µA
-5 -
-
V
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power Added Efficiency
P1dB
G1dB
ηadd
VDS = 10V
f = 2.0 GHz
IDS = 0.6IDSS
34.5 35.5
11.5 12.5
- 46
-
-
-
dBm
dB
%
Thermal Resistance
Rth Channel to Case
Case Style: XM
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
- 7.5 10
°C/W
G.C.P.: Gain Compression Point
Edition 1.3
October 2004
1



Eudyna Devices FLU35XM
FLU35XM
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
16
12
8
4
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1200
800
400
0
VGS =0V
-0.5V
-1.0V
-1.5V
-2.0V
2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.6IDSS
f = 2.0 GHz
36
34
Pout
32
30
28 ηadd
26
50
40
30
20
10
16 18 20 22 24 26
Input Power (dBm)
2



Eudyna Devices FLU35XM
FLU35XM
L-Band Medium & High Power GaAs FET
+j50
S11
S22
+j100
+j25
+90°
0.5 GHz
S21
S12
+j10
4
5
3
02
5
25
1
-j10
4 0.5 GHz
3 21
0.5 GHz
50
100
250
+j250
180°
8 6 42
SCALE FOR |S21|
-j250
1
20.5 GHz
3 2 0°
5 5 .05
0.1
SCALE FOR |S12|
-j25
-j50
FREQUENCY
S11
(MHZ)
MAG ANG
-j100
-90°
S-PARAMETERS
VDS = 10V, IDS = 720mA
S21 S12
MAG ANG
MAG ANG
S22
MAG ANG
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.957 -66.2
.894 -147.0
.902 -167.1
.899 -176.1
.897 177.8
.896 172.9
.892 168.1
.883 163.4
.871 158.6
.858 153.9
.830 148.8
22.578
7.757
3.947
2.592
1.897
1.492
1.223
1.041
.921
.839
.790
145.6
94.1
71.6
55.8
41.9
29.5
17.9
7.0
-3.9
-14.8
-26.5
.014 60.6 .186 -125.7
.023 17.4 .386 -154.8
.023 5.2 .455 -157.0
.023 1.5 .517 -157.1
.022 -1.0 .578 -158.9
.021 3.9 .634 -161.3
.022 1.5 .679 -164.7
.023 .3 .714 -168.0
.026 5.3 .742 -171.7
.029 2.9 .766 -175.4
.034 -1.0 .786 -179.4
3







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