GaAs FET. FLL810IQ-4C Datasheet

FLL810IQ-4C FET. Datasheet pdf. Equivalent

FLL810IQ-4C Datasheet
Recommendation FLL810IQ-4C Datasheet
Part FLL810IQ-4C
Description L-Band High Power GaAs FET
Feature FLL810IQ-4C; FEATURES • Push-Pull Configuration • High Power Output: 80W • High PAE: 45%. • Excellent Linearity •.
Manufacture Eudyna Devices
Datasheet
Download FLL810IQ-4C Datasheet




Eudyna Devices FLL810IQ-4C
FEATURES
Push-Pull Configuration
High Power Output: 80W
• High PAE: 45%.
• Excellent Linearity
• Suitable for class AB operation.
• Hermetically Sealed Package
FLL810IQ-4C
L-Band High Power GaAs FET
DESCRIPTION
The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design
which offers excellent linearity, ease of matching, and greater consistency in
covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely
suited for use in WLL applications as it offers high gain, long term reliability and
ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
136
-65 to +175
+175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Symbol
Conditions
Drain Current
IDSS
VDS = 5V, VGS = 0V
Limits
Min. Typ. Max.
-8-
Pinch-Off Voltage
Vp VDS = 5V, IDS = 220mA -0.1 -0.3 -0.5
Gate-Source Breakdown Voltage VGSO IGS = -2.2mA
-5 -
-
Output Power
Linear Gain (Note 1)
Power-Added Efficiency
Drain Current
Pout
GL
ηadd
IDSR
VDS = 12V
f = 3.6 GHz
IDS = 5.0A
Pin = 43.0dBm
48.0 49.0 -
8.5 9.5 -
- 45 -
- 11.5 15.0
Thermal Resistance
Rth Channel to Case
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 28.0dBm.
- 0.8 1.1
Unit
A
V
V
dBm
dB
%
A
°C/W
Edition 1.1
October 2001
1



Eudyna Devices FLL810IQ-4C
FLL810IQ-4C
L-Band High Power GaAs FET
OUTPUT POWER vs. FREQUENCY
VDS = 12V,
IDS(DC) = 5A
50
48
46
44
42
40
38
36
34
43dBm
38dBm
34dBm
30dBm
26dBm
3.45 3.50 3.55 3.60 3.65 3.70 3.75
Frequency (GHz)
IMD & IDS(RF) vs. TOTAL OUTPUT POWER
-24
VDS = 12V,
IDS(DC) = 5A,
-28 fo = 3.6GHz,
f1 = 3.61GHz
-32
-36
IM3
18
16
14
12
-40 10
IM5
-44 8
-48 IDS(RF)
-52
6
4
-56 2
-60
33 34 35 36 37 38 39 40 41 42 43 44 45
Total Output Power (dBm)
OUTPUT POWER & ηadd vs. INPUT POWER
VDS = 12V,
IDS(DC) = 5A,
48 f = 3.6GHz
46
44
Pout
42
40
38
36
34
ηadd
50
40
30
20
10
26 28 30 32 34 36 38 40 42
Input Power (dBm)
2



Eudyna Devices FLL810IQ-4C
FLL810IQ-4C
L-Band High Power GaAs FET
FREQUENCY
S11
(MHZ)
MAG ANG
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
4200
4300
4400
4500
.499 -103.9
.617 -120.1
.703 -131.7
.761 -141.4
.793 -148.6
.801 -155.5
.783 -162.8
.747 -169.1
.644 -176.8
.492 178.6
.315 -166.2
.397 -130.1
.603 -128.8
.743 -135.6
.825 -143.0
.878 -148.0
.910 -152.6
.937 -156.1
.949 -159.8
.953 -162.7
.956 -165.1
S-PARAMETERS
VDS = 12V, IDS = 2500mA
S21 S12
MAG ANG
MAG ANG
1.973
1.880
1.735
1.784
1.689
1.803
1.949
2.087
2.398
2.627
2.798
2.612
2.173
1.814
1.493
1.222
.999
.849
.735
.681
.666
-113.4
-125.9
-142.2
-153.8
-163.9
-178.8
171.0
154.5
136.9
116.1
88.0
59.6
33.1
13.3
-5.2
-20.4
-34.6
-46.9
-55.8
-67.5
-82.1
.017 -111.7
.017 -134.2
.016 -149.9
.016 -167.5
.017 -176.4
.017 161.0
.019 136.6
.021 119.4
.024 94.7
.031 80.3
.036 48.3
.034 15.7
.031 -8.8
.024 -33.0
.022 -47.8
.019 -59.2
.019 -67.0
.017 -76.4
.018 -86.6
.018 -96.7
.020 -107.9
S22
MAG
ANG
.796 152.9
.773 151.8
.752 150.1
.729 149.5
.714 148.0
.678 146.2
.656 143.9
.604 140.8
.566 138.8
.506 137.6
.468 143.3
.504 148.1
.558 145.3
.580 136.4
.559 125.9
.535 113.4
.483 97.7
.418 78.8
.376 53.9
.343 18.9
.386 -17.4
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
3







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