1PS74SB43

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 1PS74SB43 Schottky barrier diode Product specification 1999 Dec 10 Philips Semiconductors Product specification Schottky barrier diode FEATURES Ultra fast switching speed Low forward voltage Fast recovery time Guard ring protected Small plastic SMD package Capability of absorbing very high surge current. APPLICATIONS Rectification Circuit protection Polarity protection Switched-mode power supplies. 1 2 3 MAM421 1PS74SB43 PINNING PIN 1 2 3 4 5 6 anode cathode anode anode cathode anode DESCRIPTION handbook, halfpage 6 5 4 2, 5 1, 3, 4, 6 DESCRIPTION Planar Schottky barrier diode encapsulated in an SC-74 (SOT457) small plastic SMD package. Marking code: P2. Top view Fig.1 Simplified outline SC-74 (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM IRSM Tstg Tj Note 1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel. PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method; note 1 tp = 100 µs CONDITIONS − − − − −65 − MIN. MAX. 40 1 27 0.5 +150 125 UNIT V A A A °C °C 1999 Dec 10 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAM...