Power Transistor. IPW60R075CPA Datasheet

IPW60R075CPA Transistor. Datasheet pdf. Equivalent

IPW60R075CPA Datasheet
Recommendation IPW60R075CPA Datasheet
Part IPW60R075CPA
Description Power Transistor
Feature IPW60R075CPA; CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extr.
Manufacture Infineon Technologies
Datasheet
Download IPW60R075CPA Datasheet




Infineon Technologies IPW60R075CPA
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPW60R075CPA
600 V
0.075 Ω
87 nC
PG-TO247-3
Type
IPW60R075CPA
Package
PG-TO247-3
Marking
6R075PA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1),2)
AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating temperature
Storage temperature
Mounting torque
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse
E AS
E AR
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
I AR
dv /dt
V DS=0...480 V
V GS
P tot
static
T C=25 °C
Tj
T stg
M3 and M3.5 screws
Rev. 2.0
page 1
Value
39
25
130
1150
1.7
11
50
±20
313
-40 ... 150
-40 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2010-02-15



Infineon Technologies IPW60R075CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
Symbol Conditions
IS
I S,pulse
dv /dt
T C=25 °C
IPW60R075CPA
Value
26
117
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
- - 0.4 K/W
- - 62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.74 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=26 A,
T j=25 °C
V GS=10 V, I D=26 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
- 5 µA
- 100 nA
0.068 0.075 Ω
0.18 -
1.3 - Ω
Rev. 2.0
page 2
2010-02-15



Infineon Technologies IPW60R075CPA
IPW60R075CPA
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related4)
C o(er)
Effective output capacitance, time
related5)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=26 A,
R G=7.6 Ω
-
-
-
-
-
-
-
-
4000
190
180
480
40
17
110
7
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=400 V, I D=26 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
20 - nC
30 -
87 116
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=26 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 500 - ns
- 15 - µC
- 58 - A
1) Pulse width t p limited by T j,max
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3) I SDI D, di /dt 100A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch
4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2010-02-15







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