BARRIER DIODE. SB2100 Datasheet

SB2100 DIODE. Datasheet pdf. Equivalent


Part SB2100
Description 2.0A SCHOTTKY BARRIER DIODE
Feature Z ibo Seno Electronic Engineering Co., Ltd. SB220 – SB2200 2.0A SCHOTTKY BARRIER DIODE Features .
Manufacture Zibo Seno Electronic
Datasheet
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SB2100
Z ibo Seno Electronic Engineering Co., Ltd.
SB220 – SB2200
2.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
AB
Inverters, Free Wheeling, and Polarity
Protection Applications
D
A
C
Mechanical Data
! Case: DO-15, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
DO-15
Dim Min Max
A 25.4 —
B 5.50 7.62
C 0.71 0.864
D 2.60 3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol SB220 SB230 SB240 SB250 SB260 SB280 SB2100 SB2150 SB2200 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM 20 30 40 50 60 80 100 150 200 V
VR
VR(RMS)
14
21
28
35
42
56
70 105 140
V
Average Rectified Output Current @TL = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 2.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Typical Thermal Resistance (Note 1)
Operating Temperature Range
Storage Temperature Range
IO
IFSM
VFM
IRM
RJL
RJA
Tj
TSTG
0.55
2.0
50
0.70 0.85
0.5
20
28
88
-65 to +125
-65 to +150
0.90
A
A
V
mA
°C/W
°C
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB220 – SB2200
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SB2100
Z ibo Seno Electronic Engineering Co., Ltd.

3.0
SB220 – SB2200
100
2.5
SB220 - SB240
10
2.0
SB250 - SB260
1.5 1.0
1.0
0.5
0
25
50
40
50 75 100 125 150
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
Single Half-Sine-Wave
(JEDEC Method)
Tj = 100°C
30
20
SB280 - SB2200
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
Tj = 25°C
f=1.0MHz
100
SB220 - SB240
SB250 - SB2200
10
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
1k
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
100
SB220 – SB2200
10
Tj = 100°C
1.0
Tj = 75°C
0.1
Tj = 25°C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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