BARRIER RECTIFIER. SB2100 Datasheet

SB2100 RECTIFIER. Datasheet pdf. Equivalent


Part SB2100
Description SCHOTTKY BARRIER RECTIFIER
Feature 1.0(25.4) MAX. 0.300(7.6) 0.230(5.8) 1.0(25.4) MAX. SB220 THRU SB2200 SCHOTTKY BARRIER RECTIFIER R.
Manufacture GOOD ELECTRONIC
Datasheet
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SB2100
1.0(25.4)
MAX.
0.300(7.6)
0.230(5.8)
1.0(25.4)
MAX.
SB220 THRU SB2200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current - 2.0 Ampere
DO-15
FEATURES
0.034(0.9)
0.028(0.7)
The plastic package carries Underwriters Laboratory Flammability
Classification 94V-0.
Metal silicon junction,majority carrier conduction.
Low power loss,high efficiency.
High forward surge current capability.
High temperature soldering guaranteed:
250 oC/10 seconds,0.375”(9.5mm) lead length,
0.140(3.6))
0.104(2.6)
MECHANICAL DATA
Case: JEDEC DO-15 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.014 ounce, 0.40 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwis e specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum repetitive peak reverse voltage
SYMBOLS SB SB SB SB SB SB SB SB SB2100 SB2150 SB2200 UNITS
220 230 240 250 260 270 280 290
VRRM 20 30 40 50 60 70 80 90 100 150 200 Volts
Maximum RMS voltage
VRMS 14 21 28 35 42 49 56 63 70 105 140 Volts
Maximum DC blocking voltage
VR
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
at 8.3ms single half sine-wave superimposed on rated load (JEDEC
Method)
Maximum Forward Voltage at IF=2.0A
IF(AV)
IFSM
VF
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
IR
Typical Junction Capacitance (NOTE 1)
CJ
20 30 40 50 60 70 80 90 100
2.0
60.0
0.50
0.70
10.0
220
0.85
0.5
5.0
150
150 200 Volts
Amp
Amps
0.92
Volts
mA
pF
Typical Thermal Resistance (NOTE 2)
Rθ JA
50 °C/W
Operating Junction Temperature Range
TJ -65 to +125
-65 to +150
°C
Storage Temperature Range
TSTG
-65 +150
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Mounted with minimum recommended padsizePCBoard FR4.
3. TJ=25°C unless otherwise specified.
GOOD ELECTRONIC CO., LTD



SB2100
SB220 THRU SB2200
RATINGS AND CHARACTERISTIC CURVES
FIG. 1- FORWARD CURRENT DERATING CURVE
2.0
1.5
20V~60V
1.0 70V-200V
0.5
SINGLE PHASE HALF 60Hz
RESUSTIVE OR INDUCTIVE LOAD P.C.B.
MOUNTED ON 0.2x0.2(5.0x5.0MM) COPPER
PAD AREAS
0.0
0 25 50 75 100
125
150
LEAD TEMPERATURE( °C)
175
FIG. 2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
60
55
50
45
40
35
30
25
20
15
10
5
0
0
8.3ms SINGLE HALF
SINE-WAVE (JEDEC
Method)
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
50V ~ 60V
20V ~ 40V
1
0.1
70V ~ 100V
150V~200V
0.01
0.001
0.2 0.4 0.6 0.8 1.0 1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4-TYPICAL INSTANTANEOUS REVERSE
CHARACTERISTICS
100
10
TJ=100°C
1
TJ=75°C
0.1
0.01
TJ= 25°C
0.001
0
20 40 60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,(%)
FIG. 5-TYPICAL JUNCTION CAPACITANCE
1000
20V~40V
50V~200V
100
10
0.1
TJ= 25°C
1.0 10
REVERSE VOLTAGE,(V)
100
FIG. 6-TYPICAL TRANSIENT THERMAL
IMPEDANCE
100
10
1
0.1
0.01
0.1 1.0
10
t,PULSE DURATION, sec
100
GOOD ELECTRONIC CO., LTD







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