1PS76SB40

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB40 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode FEATURES Low forward voltage Guard ring protected Very small plastic SMD package Low diode capacitance. handbook, 4 columns 1PS76SB40 DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. Marking code: S4. k a MAM283 Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms CONDITIONS − − − − −65 − −65 MIN. MAX. 40 120 120 200 +150 150 +150 UNIT V mA mA mA °C °C °C 1999 Apr 26 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.2 IF = 1 mA IF = 10 mA IF = 40 mA IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD323 standard mounting conditions. PARAMETER th...