DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D049
1PS76SB62 Schottky barrier diode
Product specification 2001 Feb...
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D049
1PS76SB62
Schottky barrier diode
Product specification 2001 Feb 16
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES Ultra high switching speed Very low capacitance High breakdown voltage Guard ring protected Two pin very small plastic SMD package.
olumns
1PS76SB62
PINNING PIN 1 2 DESCRIPTION cathode anode
1
2
APPLICATIONS Ultra high-speed switching High frequency applications.
Marking code: S6.
MGU328
DESCRIPTION Epitaxial
Schottky barrier diode encapsulated in a SOD323 (SC-76) very small plastic SMD package. ESD sensitive device, observe handling precautions. Fig.1 Simplified outline (SOD323; SC-76) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Tstg Tj Tamb continuous reverse voltage continuous forward current storage temperature junction temperature operating ambient temperature PARAMETER − − −65 − −65 MIN. MAX. 40 20 +150 125 +125 V mA °C °C °C UNIT
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD323 (SC-76) standard mounting conditions. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 450 UNIT K/W PARAMETER forward voltage reverse current diode capacitance CONDITIONS IF = 2 mA; see Fig.2; note 1 VR = 40 V; see Fig.3; note 1 VR = 0 V;...