Schottky Rectifier. SBL1040CT Datasheet

SBL1040CT Rectifier. Datasheet pdf. Equivalent

SBL1040CT Datasheet
Recommendation SBL1040CT Datasheet
Part SBL1040CT
Description Dual Common Cathode Schottky Rectifier
Feature SBL1040CT; www.vishay.com SBL10x0CT, SBLF10x0CT, SBLB10x0CT Vishay General Semiconductor Dual Common Cathode .
Manufacture Vishay
Datasheet
Download SBL1040CT Datasheet




Vishay SBL1040CT
www.vishay.com
SBL10x0CT, SBLF10x0CT, SBLB10x0CT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
SBL10x0CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
SBLF10x0CT
PIN 1
PIN 2
PIN 3
2
1
SBLB10x0CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2x5A
30 V to 40 V
175 A
0.55 V
125 °C
TO-220AB, ITO-220AB, TO-263AB
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC = 107 °C
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
TJ, TSTG
VAC
SBL1030CT SBL1040CT
30 40
21 28
30 40
10
5.0
175
- 40 to + 125
1500
UNIT
V
A
°C
V
Revision: 12-Jun-13
1 Document Number: 88726
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SBL1040CT
www.vishay.com
SBL10x0CT, SBLF10x0CT, SBLB10x0CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage per diode
VF (1)
5.0 A
Maximum instantaneous reverse current at DC blocking voltage
per diode
IR (2)
Rated VR
TC = 25 °C
TC = 100 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VALUE
0.55
0.5
50
UNIT
V
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL
Typical thermal resistance per diode
RJC
3.0
SBLF
5.0
SBLB
3.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
SBL1030CT-E3/45
ITO-220AB
SBLF1030CT-E3/45
TO-263AB
SBLB1030CT-E3/45
TO-263AB
SBLB1030CT-E3/81
TO-220AB
SBL1030CTHE3/45 (1)
ITO-220AB
SBLF1030CTHE3/45 (1)
TO-263AB
SBLB1030CTHE3/45 (1)
TO-263AB
SBLB1030CTHE3/81 (1)
Note
(1) AEC-Q101 qualified
UNIT WEIGHT (g)
1.85
1.99
1.35
1.35
1.85
1.99
1.35
1.35
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
Revision: 12-Jun-13
2 Document Number: 88726
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SBL1040CT
www.vishay.com
SBL10x0CT, SBLF10x0CT, SBLB10x0CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12.5
10
Resistive or Inductive Load
7.5
5
2.5
0
0 50 100 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
10 TJ = 125 °C
1 TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
300
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100 100
TJ = 125 °C
10
TJ = 25 °C
1
10
0.1
0.01
0
Pulse Width = 300 µs
1 % Duty Cycle
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 12-Jun-13
3 Document Number: 88726
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)