1PS79SB62

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB62 Schottky barrier diode Product specification 2001 Jan 18 Philips Semiconductors Product specification Schottky barrier diode FEATURES Ultra high switching speed Very low capacitance High breakdown voltage Guard ring protected Ultra small plastic SMD package. APPLICATIONS Ultra high-speed switching High frequency applications. DESCRIPTION Epitaxial Schottky barrier diode encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. ESD sensitive device, observe handling precautions. PINNING 1PS79SB62 handbook, halfpage 1 k Marking code: S9. Fig.1 
1 2 Top view PIN DESCRIPTION cathode anode 2 a MAM403 Simplified outline (SOD523; SC-79) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Tstg Tj Tamb continuous reverse voltage continuous forward current storage temperature junction temperature operating ambient temperature PARAMETER − − −65 − −65 MIN. MAX. 40 20 +150 125 +125 V mA °C °C °C UNIT 2001 Jan 18 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD523 (SC-79) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS forward voltage reverse current diode capacitance PARAMET...