Barrier Rectifier. B160LW-S Datasheet

B160LW-S Rectifier. Datasheet pdf. Equivalent

B160LW-S Datasheet
Recommendation B160LW-S Datasheet
Part B160LW-S
Description Surface Mount Low VF Low IR Schottky Barrier Rectifier
Feature B160LW-S; Sooner Power Semiconductor B140LW-S / B160LW-S Surface Mount Low VF Low IR Schottky Barrier Rectif.
Manufacture Sooner Power Semiconductor
Datasheet
Download B160LW-S Datasheet




Sooner Power Semiconductor B160LW-S
Sooner Power Semiconductor
B140LW-S / B160LW-S
Surface Mount Low VF Low IR Schottky Barrier Rectifier
Package Outline Dimensions ( millimeters )
A
BC
E
D
SOD-123S
Dim. Min. Max.
A 3.55 3.85
B 0.80 1.00
C 1.60 2.00
D 0.12 0.20
E 1.00 1.40
F 0.60 1.00
G 0.60 1.00
All Dimensions in millimeter
F
K
G
A
Features
• High Current Capability
• Low Switching Noise
• High Surge Capability
• Low Power Loss & High Efficiency
• Guard Ring Protection
• Pd-free lead plating & Halogen-free part
Mechanical
• Molded Plastic Low profile SOD-123S
• Plastic materials used carries underwriters
laboratory flammability classification 94V-0
• Lead Temperature for Soldering Purposes
265Max. for 10 Seconds
• Device Weight : Approximated 0.018 grams
Maximum Ratings & Electrical Characteristics ( TA = 25unless otherwise specified )
Parameter
Symbol B140LW-S B160LW-S
Marking Code
14L 16L
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated VR-20Khz Square Wave) - 50% duty cycle
VRM
VRWM
VRRM
IF(AV)
40 60
28 42
40 60
1
Non-Repetitive Peak Forward Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz)
IFSM
50
Instantaneous Forward Voltage
IF = 1A , TA = 25
Instantaneous Reverse Current
VR = VRRM , TA = 25
VR = VRRM , TA = 100
Total Capacitance
VR = 4V , f = 1MHz
NOTE1.FR-4 PCB, 2 oz Copper. Minimum recommended pad layout
VF
IR
CT
0.45 0.65
0.5
20
200
2.Polymide PCB, 2 oz Copper. Cathode pad dimensions 18.8x14.4mm , Anode pad dimensions 5.6x14.4mm
Units
Volts
Amps
Amps
Volts
mA
pF
REV. 00 - JUN-2015
1



Sooner Power Semiconductor B160LW-S
Sooner Power Semiconductor
B140LW-S / B160LW-S
Thermal Characteristics ( TA = 25unless otherwise specified )
Parameter
Maximum Thermal Resistance
Operating & Storage Junction Temperature
Symbol
Junction to Lead RθJL
TJ
TSTG
Value
25
125
- 65 to +150
Units
/W
Ratings and Characteristics Curves ( TA = 25unless otherwise specified )
1.5
1
0.5
0
0
25 50 75 100 125
TT, Terminal Temperature ()
150
Figure 1: Current Derating Curves
60
50
40
30
20
10
0
1
Single Half-Sine-Wave
10
Number of Cycles at 60 Hz
100
Figure 2: Peak Forward Surge Current
10
1 40V
Tj = 25℃
Pulse Width 300us
1% Duty Cycle
60V
0.1
200
300 400 500 600 700 800
VF, Instantaneous Forward Voltage (mV)
900
Figure 3: Typical Forward Characteristics
100000
10000
1000
100
10
1
0
Tj=150
Tj=125
Tj=100
Tj=75
Tj=25
20 40 60 80 100
Percentage Of Peak Reverse Voltage (%)
120
Figure 4: Typical Reverse Characteristics
REV. 00 - JUN-2015
2



Sooner Power Semiconductor B160LW-S
Sooner Power Semiconductor
Suggested Pad Layout
B140LW-S / B160LW-S
C
A
B
SOD-123S
Symbol
Dimensions
A 1.10
B 1.00
C 2.00
All Dimensions in millimeter
Ordering information
Part Number
B140LW-S / B160LW-S
Package
SOD-123S
Delivery mode
3,000 pieces / 7" Reel
Tape and Reel Dimensions ( millimeters )
Surface Mount Device are packed in accordance with EIA standard RS-481-D and specification.
E d P0
F
A
T
BW
Item
Carrier width
Symbol
A
Dimensions (mm)
SOD-123S
2.0 ± 0.1
Carrier length
B 3.95 ± 0.1
P
Carrier depth
C 1.45 ± 0.1
Sprocket hole
d 1.55 ± 0.1
Reel outside diameter D
C
Reel inner diameter
D1
178.0 ± 1.0
50.0 ± 1.0
Feed hole diameter
D2
13.0 ± 1.0
Stocket hole position
E
1.75 ± 0.1
Punch hole position
F
3.5 ± 0.05
Punch hole pitch
P
4.0 ± 0.1
Sprocket hole pitch
P0
4.0 ± 0.1
Totall tape thickness
T
0.23 ± 0.1
Tape width
W 8.0 ± 0.3
Reel width
W1 11.4 ± 1.5
D2 D1
D
REV. 00 - JUN-2015
W1
3







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