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BAT42

Taiwan Semiconductor

Hermetically Sealed Glass Fast Switching Schottky Barrier Diode

Small Signal Product BAT42 / BAT43 Taiwan Semiconductor Hermetically Sealed Glass Fast Switching Schottky Barrier Diod...


Taiwan Semiconductor

BAT42

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Description
Small Signal Product BAT42 / BAT43 Taiwan Semiconductor Hermetically Sealed Glass Fast Switching Schottky Barrier Diode FEATURES - Low forward voltage drop - Through-hole device type mounting - Hermetically sealed glasss - Compression bonded construction - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and leads are readily solderable DO-35 Hermetically Sealed Glass MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage VRRM 30 Maximum DC Blocking Voltage VR 30 Average Forward Rectified Current Peak Forward Surge Current IF(AV) IFSM 200 4 Operating and Storage Temperature Range TJ , TSTG -65 to +125 PARAMETER SYMBOL Breakdown Voltage IR=100μA BV IF=200mA BAT42 IF=10mA Forward Voltage Drop All Types IF=50mA IF=200mA VF BAT43 IF=2mA IF=15mA Maximum Peak Reverse Current VR=25V IR Junction Capacitance VR=1V, f=1.0MHz CJ Reverse Recovery Time (Note 1) trr Note 1: Reverse recovery test conditions: IF=IR=10mA, IRR=1mA, RL=100Ω MIN 30 0.26 - 500 7 (Typ) 5 (Typ) MAX - 1.00 0.40 0.65 1.00 0.33 0.45 UNIT mW V V mA A oC UNIT V V nA pF ns Document Number: DS_S1412008 Version: C14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Ptot - Power Dissipation (mW) Fig.1 Admissible Power Dissipation VS. Ambient Temperature 250 200 150 100 50 0 0 25 50 75 100 12...




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