Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes
Preliminary specification 1998 Nov 10
Philips Semiconductors
Preliminary specification
Schottky barrier double diodes
FEATURES • Power dissipation comparable to SOT23 • Low forward voltage • Guard ring protected • Ultra small SMD package. APPLICATIONS • Ultra high speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION
1 2
MBK837
1PS89SB14; 1PS89SB15; 1PS89SB16
PINNING 1PS89SB.. PIN 14 1 2 3 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.2
1 2
MLC358
3
1PS89SB14 diode configuration (symbol).
3
fpage
3 1 2
MLC359
Fig.3
Planar Schottky barrier double diodes encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. MARKING TYPE NUMBER 1PS89SB14 1PS89SB15 1PS89SB15 MARKING CODE 44 43 45 Fig.1
Top view
1PS89SB15 diode configuration (symbol).
Simplified outline (SC-89; SOT490) and pin configuration. Fig.4
3 1 2
MLC360
1PS89SB16 diode configuration (symbol).
1998 Nov 10
2
Philips Semiconductors
Preliminary specification
Schottky barrier double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER
1PS89SB14; 1PS89SB15; 1PS89SB16
CONDITIONS
MIN.
MAX.
UNIT
Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms Tamb ≤ 25 °C − − − − − −65 − −65 30 200 300 600 200 +150 125 +125 V mA mA mA mW °C °C °C
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode unless otherwise specified VF forward voltage see Fig.5 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-89 (SOT490) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W reverse current diode capacitance VR = 25 V; note 1; see Fig.6 f = 1 MHz; VR = 1 V; see Fig.7 240 320 400 500 800 2 10 mV mV mV mV mV µA pF
1998 Nov 10
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Philips Semiconductors
Preliminary specification
Schottky barrier double diodes
GRAPHICAL DATA
1PS89SB14; 1PS89SB15; 1PS89SB16
MSA892
3 10 handbook, halfpage
103 IR (µA) 102
(2) (1)
MGL495
IF (mA) 10
2
(1) (2) (3)
10
10
1
(1)
(2)
(3)
1
(3)
10 1
10−1
0 0.4 0.8 VF (V) 1.2
0 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
10
20
VR (V)
30
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.5
Forward current as a function of forward voltage; typical values.
Fig.6
Reverse current as a function of reverse voltage; typical values.
15 Cd (pF) 10
MGL496
5
0
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
1998 Nov 10
4
Philips Semiconductors
Preliminary specification
Schottky barrier double diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
1PS89SB14; 1PS89SB15; 1PS89SB16
SOT490
D
B
E
A
X
HE
v M A
3
A
1
e1 e bp
2
w M B Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1
OUTLINE VERSION SOT490
REFERENCES IEC JEDEC EIAJ SC-89
EUROPEAN PROJECTION
ISSUE DATE 98-10-23
1998 Nov 10
5
Philips Semiconductors
Preliminary specification
Schottky barrier double diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
1PS89SB14; 1PS89SB15; 1PS89SB16
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting fro.