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1PS89SB14 Dataheets PDF



Part Number 1PS89SB14
Manufacturers NXP
Logo NXP
Description Schottky barrier double diodes
Datasheet 1PS89SB14 Datasheet1PS89SB14 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Preliminary specification 1998 Nov 10 Philips Semiconductors Preliminary specification Schottky barrier double diodes FEATURES • Power dissipation comparable to SOT23 • Low forward voltage • Guard ring protected • Ultra small SMD package. APPLICATIONS • Ultra high speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION 1 2 MBK837 1PS89SB14; 1PS89SB15; 1PS8.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Preliminary specification 1998 Nov 10 Philips Semiconductors Preliminary specification Schottky barrier double diodes FEATURES • Power dissipation comparable to SOT23 • Low forward voltage • Guard ring protected • Ultra small SMD package. APPLICATIONS • Ultra high speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION 1 2 MBK837 1PS89SB14; 1PS89SB15; 1PS89SB16 PINNING 1PS89SB.. PIN 14 1 2 3 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.2 1 2 MLC358 3 1PS89SB14 diode configuration (symbol). 3 fpage 3 1 2 MLC359 Fig.3 Planar Schottky barrier double diodes encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. MARKING TYPE NUMBER 1PS89SB14 1PS89SB15 1PS89SB15 MARKING CODE 44 43 45 Fig.1 Top view 1PS89SB15 diode configuration (symbol). Simplified outline (SC-89; SOT490) and pin configuration. Fig.4 3 1 2 MLC360 1PS89SB16 diode configuration (symbol). 1998 Nov 10 2 Philips Semiconductors Preliminary specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER 1PS89SB14; 1PS89SB15; 1PS89SB16 CONDITIONS MIN. MAX. UNIT Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms Tamb ≤ 25 °C − − − − − −65 − −65 30 200 300 600 200 +150 125 +125 V mA mA mA mW °C °C °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode unless otherwise specified VF forward voltage see Fig.5 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-89 (SOT490) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W reverse current diode capacitance VR = 25 V; note 1; see Fig.6 f = 1 MHz; VR = 1 V; see Fig.7 240 320 400 500 800 2 10 mV mV mV mV mV µA pF 1998 Nov 10 3 Philips Semiconductors Preliminary specification Schottky barrier double diodes GRAPHICAL DATA 1PS89SB14; 1PS89SB15; 1PS89SB16 MSA892 3 10 handbook, halfpage 103 IR (µA) 102 (2) (1) MGL495 IF (mA) 10 2 (1) (2) (3) 10 10 1 (1) (2) (3) 1 (3) 10 1 10−1 0 0.4 0.8 VF (V) 1.2 0 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 10 20 VR (V) 30 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.5 Forward current as a function of forward voltage; typical values. Fig.6 Reverse current as a function of reverse voltage; typical values. 15 Cd (pF) 10 MGL496 5 0 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 1998 Nov 10 4 Philips Semiconductors Preliminary specification Schottky barrier double diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads 1PS89SB14; 1PS89SB15; 1PS89SB16 SOT490 D B E A X HE v M A 3 A 1 e1 e bp 2 w M B Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1 OUTLINE VERSION SOT490 REFERENCES IEC JEDEC EIAJ SC-89 EUROPEAN PROJECTION ISSUE DATE 98-10-23 1998 Nov 10 5 Philips Semiconductors Preliminary specification Schottky barrier double diodes DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values 1PS89SB14; 1PS89SB15; 1PS89SB16 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting fro.


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