SUD19P06-60

P-Channel 60 V (D-S) MOSFET SUD19P06-60 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.060 at VGS = - 10 V 0.077 at VGS = - 4.5 V ID (A)d - 19 - 16.8 Qg (Typ) 26 TO-252 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Converter DC/DC Converter for LCD Display S G GDS Top View Drain Connected to Tab Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea L = 0.1 mH IAS EAS Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 60 ± 20 - 18.3 - 8.19 - 30 - 22 24.2 38.5c 2.3b, c - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on TC = 25 °C. t  10 s Steady State Symbol RthJA RthJC Typical 17 45 2.7 Maximum 21 55 3.25 Unit °C/W Document Number: 69253 www.vishay.com S11-2132...