DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes
Preliminary ...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SB14; 1PS89SB15; 1PS89SB16
Schottky barrier double diodes
Preliminary specification 1998 Nov 10
Philips Semiconductors
Preliminary specification
Schottky barrier double diodes
FEATURES Power dissipation comparable to SOT23 Low forward voltage Guard ring protected Ultra small SMD package. APPLICATIONS Ultra high speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION
1 2
MBK837
1PS89SB14; 1PS89SB15; 1PS89SB16
PINNING 1PS89SB.. PIN 14 1 2 3 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.2
1 2
MLC358
3
1PS89SB14 diode configuration (symbol).
3
fpage
3 1 2
MLC359
Fig.3
Planar
Schottky barrier double diodes encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. MARKING TYPE NUMBER 1PS89SB14 1PS89SB15 1PS89SB15 MARKING CODE 44 43 45 Fig.1
Top view
1PS89SB15 diode configuration (symbol).
Simplified outline (SC-89; SOT490) and pin configuration. Fig.4
3 1 2
MLC360
1PS89SB16 diode configuration (symbol).
1998 Nov 10
2
Philips Semiconductors
Preliminary specification
Schottky barrier double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER
1PS89SB14; 1PS89SB15; 1PS89SB16
CONDITIONS
MIN.
MAX.
UNIT
Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipa...