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1PS89SB15

NXP

Schottky barrier double diodes

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Preliminary ...


NXP

1PS89SB15

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Description
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Preliminary specification 1998 Nov 10 Philips Semiconductors Preliminary specification Schottky barrier double diodes FEATURES Power dissipation comparable to SOT23 Low forward voltage Guard ring protected Ultra small SMD package. APPLICATIONS Ultra high speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION 1 2 MBK837 1PS89SB14; 1PS89SB15; 1PS89SB16 PINNING 1PS89SB.. PIN 14 1 2 3 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.2 1 2 MLC358 3 1PS89SB14 diode configuration (symbol). 3 fpage 3 1 2 MLC359 Fig.3 Planar Schottky barrier double diodes encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. MARKING TYPE NUMBER 1PS89SB14 1PS89SB15 1PS89SB15 MARKING CODE 44 43 45 Fig.1 Top view 1PS89SB15 diode configuration (symbol). Simplified outline (SC-89; SOT490) and pin configuration. Fig.4 3 1 2 MLC360 1PS89SB16 diode configuration (symbol). 1998 Nov 10 2 Philips Semiconductors Preliminary specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER 1PS89SB14; 1PS89SB15; 1PS89SB16 CONDITIONS MIN. MAX. UNIT Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipa...




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