NPN TRANSISTOR. S8050 Datasheet

S8050 TRANSISTOR. Datasheet pdf. Equivalent

S8050 Datasheet
Recommendation S8050 Datasheet
Part S8050
Description LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Feature S8050; UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL.
Manufacture UTC
Datasheet
Download S8050 Datasheet




UTC S8050
UNISONIC TECHNOLOGIES CO., LTD
S8050
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio amplifier
and general purpose applications.
FEATURES
* Collector current up to 700mA
* Collector-Emitter voltage up to 20 V
* Complementary to S8550
ORDERING INFORMATION
Order Number
Lead Free Plating
Halogen Free
Package
S8050L-x-T92-B
S8050G-x-T92-B
TO-92
S8050L-x-T92-K
S8050G-x-T92-K
TO-92
Note: Pin Assignment: E: Emitter
B: Base C: Collector
1
Pin Assignment
123
EBC
EBC
TO-92
Packing
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
TO-92
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UTC S8050
S8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
30 V
20 V
Emitter-Base Voltage
Collector Current
VEBO
IC
5V
700 mA
Collector Dissipation(TA=25°C)
Junction Temperature
PC
TJ
1W
150 °C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC=100A, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=100μA, Ic=0
ICBO VCB=30V, IE=0
IEBO
hFE1
VEB=5V, IC=0
VCE=1V, IC=1mA
hFE2
hFE3
VCE=1V, IC=150 mA
VCE=1V, IC=500mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=500mA, IB=50mA
VBE VCE=1V, IC=10mA
fT VCE=10V, IC=50mA
Cob VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
30 V
20 V
5V
1 μA
100 nA
100
120 400
40
0.5 V
1.2 V
1.0 V
100 MHz
9.0 pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTC S8050
S8050
TYPICAL CHARACTERISTICS
Static Characteristics
0.5 IB=3.0mA
0.4 IB=2.5mA
IB=2.0mA
0.3
IB=1.5mA
0.2 IB=1.0mA
0.1 IB=0.5mA
0 0 0.4 0.8 1.2 1.6 2.0
Collector-Emitter Voltage, VCE ( V)
Base-Emitter on Voltage
102
VCE=1V
101
100
10-10
0.2 0.4 0.6 0.8 1.0
Base-Emitter Voltage, VBE (V)
Current Gain-Bandwidth Product
103
VCE=10V
102
101
101000
101 102 103
Collector Current, Ic (mA)
NPN SILICON TRANSISTOR
DC Current Gain
103
VCE=1V
102
101
10100-1
100 101
102 103
Collector Current, Ic (mA)
Saturation Voltage
104
Ic=10*IB
103
VBE(SAT)
102
VCE(SAT)
101
10-1
100 101
102
Collector Current, Ic (mA)
103
Collector Output Capacitance
103
f=1MHz
102 IE=0
101
101000
101 102 103
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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