1PS89SB74

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB74 Schottky barrier double diode Product specification 2001 Apr 20 Philips Semiconductors Product specification Schottky barrier double diode FEATURES Low forward voltage High breakdown voltage Guard ring protected Ultra small plastic SMD package Low capacitance. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT490 (SC-89) ultra small plastic SMD package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS 1 Top view Marking code: S7. 2 MBK837 1PS89SB74 PINNING PIN 1 2 3 DESCRIPTION anode (a1) cathode (k2) common (k1, a2) fpage 3 3 1 2 MLC358 Fig.1 Simplified outline (SOT490; SC-89) and symbol. MIN. − − MAX. UNIT Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms Tamb ≤ 25 °C 70 70 70 100 200 +150 +150 +150 V mA mA mA mW °C °C °C − − − −65 − −65 2001 Apr 20 2 Philips Semiconductors Product specification Schottky barrier double diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.2;...