1PS89SS06

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SS04; 1PS89SS05; 1PS89SS06 High-speed double diodes Preliminary specification Supersedes data of 1999 Mar 01 1999 Jun 08 Philips Semiconductors Preliminary specification High-speed double diodes FEATURES Power dissipation comparable to SOT23 Ultra small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 80 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High speed switching in e.g. surface mounted circuits. DESCRIPTION Two high-speed switching diodes in planar technology, with different configurations, in an ultra small SC-89 (SOT490) plastic SMD package. fpage 1PS89SS04; 1PS89SS05; 1PS89SS06 PINNING 1PS89SS.. PIN 04 1 2 3 a1 k2 k1, a2 05 a1 a2 k1, k2 06 k1 k2 a1, a2 Fig.2 1 2 MGL550 3 1PS89SS04 diode configuration (symbol). 3 3 1 1 Top view 2 MBK837 MGL551 2 Fig.1 Simplified outline (SC-89; SOT490) and pin configuration. Fig.3 1PS89SS05 diode configuration (symbol). MARKING TYPE NUMBER 1PS89SS04 1PS89SS05 1PS89SS06 MARKING CODE S4 S5 S6 Fig.4 1 3 2 MGL552 1PS89SS06 diode configuration (symbol). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS − − Tamb = 25 °C; note 1; see Fig.5 single diode loaded both diodes loaded IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.7 t = 1 µs...