Silicon Epitaxial Junction Type High-Efficiency Rectifier
1R5DL41A
TOSHIBA High Efficiency Rectifier (HED) Silicon Epitaxial Junction Type
1R5DL41A
Switching Mode Power Supply A...
Description
1R5DL41A
TOSHIBA High Efficiency Rectifier (HED) Silicon Epitaxial Junction Type
1R5DL41A
Switching Mode Power Supply Applications
· Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) · Very Fast Reverse-Recovery Time: trr = 35 ns (max) · Low Forward Voltage: VFM = 0.98 V (max) · Available to Reduce Switching Losses and Output Noise.
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage Average forward current (Ta = 25°C)
Peak one cycle surge forward current (non-repetitive)
Junction temperature Storage temperature
Symbol VRRM IF (AV)
IFSM
Tj Tstg
Rating
200 1.5 60 (50 Hz) 66 (60 Hz) -40 to 150 -40 to 150
Unit V A
A
°C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Thermal resistance
Symbol
VFM IRRM
trr tfr Rth (j-a) Rth (j- l)
Test Condition
IFM = 1.5 A VRRM = 200 V IF = 1 A, di/dt = -30 A/ms IF = 1.0 A Junction to Ambient Junction to Lead
Marking
JEDEC
―
JEITA
―
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.98 V ¾ ¾ 100 mA ¾ ¾ 35 ns ¾ ¾ 100 ns ¾ ¾ 100 °C/W ¾ ¾ 30 °C/W
Type Code Lot No.
DLA
Cathode Mark
Month (starting from alphabet A) Year (last number of the christian era)
Color: Silver
Code DLA
Type 1R5DL41A
1 2002-09-18
Instantaneous forward current iF (A)
iF – vF
30
10
5
Tj = 150°C
25
3
1
0.5 0.3
0.1 0.2
0.4 0.6 0....
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