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1R5DL41A

Toshiba Semiconductor

Silicon Epitaxial Junction Type High-Efficiency Rectifier

1R5DL41A TOSHIBA High Efficiency Rectifier (HED) Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply A...


Toshiba Semiconductor

1R5DL41A

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Description
1R5DL41A TOSHIBA High Efficiency Rectifier (HED) Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications · Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) · Very Fast Reverse-Recovery Time: trr = 35 ns (max) · Low Forward Voltage: VFM = 0.98 V (max) · Available to Reduce Switching Losses and Output Noise. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current (Ta = 25°C) Peak one cycle surge forward current (non-repetitive) Junction temperature Storage temperature Symbol VRRM IF (AV) IFSM Tj Tstg Rating 200 1.5 60 (50 Hz) 66 (60 Hz) -40 to 150 -40 to 150 Unit V A A °C °C Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Thermal resistance Symbol VFM IRRM trr tfr Rth (j-a) Rth (j- l) Test Condition IFM = 1.5 A VRRM = 200 V IF = 1 A, di/dt = -30 A/ms IF = 1.0 A Junction to Ambient Junction to Lead Marking JEDEC ― JEITA ― TOSHIBA 3-4B1A Weight: 0.47 g (typ.) Min Typ. Max Unit ¾ ¾ 0.98 V ¾ ¾ 100 mA ¾ ¾ 35 ns ¾ ¾ 100 ns ¾ ¾ 100 °C/W ¾ ¾ 30 °C/W Type Code Lot No. DLA Cathode Mark Month (starting from alphabet A) Year (last number of the christian era) Color: Silver Code DLA Type 1R5DL41A 1 2002-09-18 Instantaneous forward current iF (A) iF – vF 30 10 5 Tj = 150°C 25 3 1 0.5 0.3 0.1 0.2 0.4 0.6 0....




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