N-channel MOSFET. 2N7002K Datasheet

2N7002K MOSFET. Datasheet pdf. Equivalent

2N7002K Datasheet
Recommendation 2N7002K Datasheet
Part 2N7002K
Description N-channel MOSFET
Feature 2N7002K; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-cha.
Manufacture JCST
Datasheet
Download 2N7002K Datasheet




JCST 2N7002K
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETs
2N7002K N-channel MOSFET
FEATURES
z High density cell design for Low RDSon
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected up to 2KV
Marking: 72K
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
60 V
ID Drain Current
340 mA
PD Power Dissipation
0.35 W
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
RθJA
Thermal Resistance fromJunction to Ambient
357
/W
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Equivalent circuit
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ
Static Characteristics
Drain-Source Breakdown Voltage
VDS VGS = 0V, ID =250µA
60
Gate Threshold Voltage*
VGS(th)
VDS =VGS, ID =1mA
1
Zero Gate Voltage Drain Current
IDSS VDS =48V,VGS = 0V
IGSS1
VGS =±20V, VDS = 0V
Gate –Source leakage current
IGSS2
VGS =±10V, VDS = 0V
IGSS3
VGS =±5V, VDS = 0V
Drain-Source On-Resistance*
RDS(on)
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
Diode Forward Voltage
VSD VGS=0V, IS=300mA
Recovered charge
Qr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
30
Max Units
1
±10
±200
±100
5.3
5
1.5
V
V
µA
µA
nA
nA
V
nC
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Reverse recovery Time
Ciss
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
td(on)
td(off)
trr
VGS=10V,VDD=50V,RG=50,
RGS=50, RL=250
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BVGSO Igs=±1mA (Open Drain)
Notes :
*Pulse Test : Pulse Width 300µs, Duty Cycle 2%.
**These parameters have no way to verify.
40 pF
30 pF
10 pF
10
15
30
ns
ns
ns
±21.5
±30 V
A,Dec,2010



JCST 2N7002K
Typical Characteristics
2N7002K
Output Characteristics
1.0
V =10,7,6,5V
GS
T =25
a
Pulsed
0.8
V =4V
GS
0.6
0.4
V =3V
GS
0.2
0.0
01234
DRAIN TO SOURCE VOLTAGE V (V)
DS
5
10
T =25
a
Pulsed
8
R
DS(ON)
——
I
D
6
4
V =4.5V
GS
2
V =10V
GS
0
0 200 400 600 800 1000
DRAIN CURRENT I (mA)
D
1200
10
T =25
a
Pulsed
1
I
S
——
V
SD
0.1
0.01
1E-3
0.0
0.5 1.0 1.5 2.0 2.5
SOURCE TO DRAIN VOLTAGE V (V)
SD
3.0
1.0
T =25
a
Pulsed
0.8
Transfer Characteristics
0.6
0.4
0.2
0.0
0123456
GATE TO SOURCE VOLTAGE V (V)
GS
R
DS(ON)
——
V
GS
10
T =25
a
Pulsed
8
6
I =500mA
D
4
2
0
0 2 4 6 8 10
GATE TO SOURCE VOLTAGE V (V)
GS
A,Dec,2010







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)