Document
UNISONIC TECHNOLOGIES CO., LTD 2N7002K
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Package
2N7002KG-AE2-R
SOT-23-3
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 SGD
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-541.D
2N7002K
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
60 V ±20 V
Drain Current
Continuous Pulse(Note 2)
ID
300 800
mA
Power Dissipation Derating above TA=25°C
PD
350 mW 2.8 mW/°C
Junction Temperature Storage Temperature
TJ TSTG
+150 -55 ~ +150
°C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=10µA
60
Drain-Source Leakage Current
IDSS VDS=60V, VGS=0V
Gate-Source Leakage Current
IGSS VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=10V, ID=1mA
1.0 1.85
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS=10V, ID=300m A VGS=4.5V, ID=200mA
DYNAMIC PARAMETERS
Input Capacitance
CISS
25
Output Capacitance
COSS VDS=25V, VGS=0V, f=1.0MHz
10
Reverse Transfer Capacitance
CRSS
3.0
SWITCHING PARAMETERS
Turn-ON Delay Time Turn-OFF Delay Time
tD(ON) tD(OFF)
ID=0.2 A, VDD=30V, VGS=10V, RL=150Ω, RG=10Ω
12 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V, Is=300mA (Note )
0.88
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Maximum Continuous Drain-Source Diode Forward Current
IS
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. 2. Pulse width≦300μs, Duty cycle≦1%
MAX UNIT
V 1.0 µA ±10 µA
2.5 V
2 4
Ω
50 pF 25 pF 5.0 pF
20 ns 30 ns
1.5 V 0.8 A
300 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-541.D
2N7002K
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Switching Test Circuit
Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-541.D
2N7002K
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source Current, ID (A)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-541.D
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