Channel MOSFET. 2N7002K Datasheet

2N7002K MOSFET. Datasheet pdf. Equivalent

2N7002K Datasheet
Recommendation 2N7002K Datasheet
Part 2N7002K
Description N Channel MOSFET
Feature 2N7002K; SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High.
Manufacture KEC
Datasheet
Download 2N7002K Datasheet




KEC 2N7002K
SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
20
Continuous
ID 300
Drain Current
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2)
PD 300
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm)
UNIT
V
V
mA
mW
EQUIVALENT CIRCUIT
D
G
2N7002K
N Channel MOSFET
ESD Protected 2000V
E
L BL
23
1
PP
M
1. SOURCE
2. GATE
3. DRAIN
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
WCType Name
Lot No.
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BVDSS
IDSS
IGSSF
IGSSR
TEST CONDITION
VGS=0V, ID=10 A
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
10
-10
UNIT
V
A
A
A
2009. 11. 17
Revision No : 2
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KEC 2N7002K
2N7002K
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC
SYMBOL
Gate Threshold Voltage
Vth
Drain-Source ON Resistance
RDS(ON)
Drain-Source ON Voltage
VDS(ON)
On State Drain Current
Forward Transconductance
ID(ON)
gFS
Drain-Source Diode Forward Voltage
VSD
Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%
TEST CONDITION
VDS=VGS, ID=250 A
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, VDS= 2 VDS(ON)
VDS=10V, ID=500mA
VGS=0V, IS=200mA (Note1)
MIN.
1.1
-
-
-
-
500
200
-
TYP.
-
1.2
1.5
0.6
0.075
-
580
760
MAX.
2.35
1.8
2.1
0.9
0.105
-
-
1150
UNIT
V
V
mA
mS
mV
DYNAMIC CHARACTERISTICS
CHARACTERISTIC
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-On Time
Turn-Off Time
SYMBOL
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VDS=25V, VGS=0V, f=1MHz
VDD=30V, RL=155 , ID=190mA,
VGS=10V
MIN.
-
-
-
-
-
TYP.
52.1
3.9
7.7
11.1
22.5
MAX.
-
-
-
-
-
UNIT
pF
nS
SWITCHING TIME TEST CIRCUIT
VGS
VDD
RL
VIN D
VOUT
G
S
td(on)
ton
tr
90%
td(off)
toff
tf
90%
OUTPUT VOUT 10%
INVERTED
90%
INPUT VIN 10%
50%
PULSE WIDTH
50%
2009. 11. 17
Revision No : 2
2/4



KEC 2N7002K
2N7002K
ID - VDS
1.5 COMMON SOURCE
Ta = 25 C
1.2
0.9 7V
10V
6V
0.6
5V
4V
0.3
0.0
0.0
VGS = 3V
1.0 2.0 3.0 4.0
DRAIN-SOURCE VOLTAGE VDS (V)
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
RDS(ON) - Tj
VGS=5V
ID=50mA
VGS=10V
ID=500mA
-50 0 50 100
JUNCTION TEMPERATURE Tj ( C)
150
ID - VGS
1.0
COMMON SOURCE
VDS =10V
0.8
0.6
-55 C
25 C
125 C
0.4
0.2
0.0
0
1234
DRAIN-SOURCE VOLTAGE VGS (V)
5
2009. 11. 17
Revision No : 2
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
RDS(ON) - ID
COMMON SOURCE
Ta = 25 C
VGS = 3V
4V
5V
6V 7V 10V
0.2 0.3 0.4 0.5
DRAIN-CURRENT ID (A)
0.6
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-100
Vth - Tj
Common Source
VGS=VDS
ID=250ยตA
-50 0 50 100
JUNCTION TEMPERATURE Tj ( C)
150
I S - VSD
1
VGS=1V
0.1
VGS=0V
0.01
0.0 0.3 0.6 0.9 1.2 1.5
BODY DIODE FORWARD VOLTAGE VSD (V)
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