Document
SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
20
Continuous
ID 300
Drain Current
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2)
PD 300
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm)
UNIT V V
mA
mW
EQUIVALENT CIRCUIT D
G
A G H
D
2N7002K
N Channel MOSFET ESD Protected 2000V
E L BL
23 1
PP
M 1. SOURCE 2. GATE 3. DRAIN
DIM A
B C D E G H J K L M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.30 MAX
0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
SOT-23
C N K J
Marking
WCType Name
Lot No.
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
SYMBOL BVDSS IDSS IGSSF IGSSR
TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V
MIN. 60 -
TYP. -
MAX. 1 10 -10
UNIT V A A A
2009. 11. 17
Revision No : 2
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2N7002K
ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 3)
CHARACTERISTIC
SYMBOL
Gate Threshold Voltage
Vth
Drain-Source ON Resistance
RDS(ON)
Drain-Source ON Voltage
VDS(ON)
On State Drain Current Forward Transconductance
ID(ON) gFS
Drain-Source Diode Forward Voltage
VSD
Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%
TEST CONDITION
VDS=VGS, ID=250 A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, VDS= 2 VDS(ON) VDS=10V, ID=500mA VGS=0V, IS=200mA (Note1)
MIN. 1.1 500 200 -
TYP. 1.2 1.5 0.6
0.075 -
580 760
MAX. 2.35 1.8 2.1 0.9 0.105
1150
UNIT V
V mA mS mV
DYNAMIC CHARACTERISTICS
CHARACTERISTIC
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-On Time Turn-Off Time
SYMBOL Ciss Crss Coss ton toff
TEST CONDITION
VDS=25V, VGS=0V, f=1MHz
VDD=30V, RL=155 , ID=190mA, VGS=10V
MIN. -
TYP. 52.1 3.9 7.7 11.1 22.5
MAX. -
UNIT pF nS
SWITCHING TIME TEST CIRCUIT
VGS
VDD
RL
VIN D
VOUT
G
S
td(on)
ton
tr 90%
td(off)
toff tf
90%
OUTPUT VOUT 10%
INVERTED 90%
INPUT VIN 10%
50% PULSE WIDTH
50%
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Revision No : 2
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2N7002K
DRAIN CURRENT ID (A)
ID - VDS
1.5 COMMON SOURCE Ta = 25 C
1.2
0.9 7V
10V 6V
0.6
5V 4V
0.3
0.0 0.0
VGS = 3V
1.0 2.0 3.0 4.0 DRAIN-SOURCE VOLTAGE VDS (V)
5.0
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
0.0 -100
RDS(ON) - Tj
VGS=5V ID=50mA
VGS=10V ID=500mA -50 0 50 100 JUNCTION TEMPERATURE Tj ( C)
150
DRAIN SOURCE ON - RESISTANCE RDS ( )
DRAIN CURRENT ID (A)
ID - VGS
1.0 COMMON SOURCE VDS =10V
0.8
0.6
-55 C
25 C 125 C
0.4
0.2
0.0 0
1234 DRAIN-SOURCE VOLTAGE VGS (V)
5
2009. 11. 17
Revision No : 2
REVERSE DRAIN CURRENT I S (A)
NORMALIZED GATE GATE SOURCE THRESHOLDVOLTAGE Vth (V)
DRAIN SOURCE ON - RESISTANCE RDS ( )
6.0 5.0 4.0 3.0 2.0 1.0 0.0
0.1
RDS(ON) - ID
COMMON SOURCE Ta = 25 C
VGS = 3V
4V 5V
6V 7V 10V 0.2 0.3 0.4 0.5
DRAIN-CURRENT ID (A)
0.6
1.4 1.3 1.2 1.1
1 0.9 0.8 0.7
0.6 -100
Vth - Tj
Common Source VGS=VDS ID=250µA
-50 0 50 100 JUNCTION TEMPERATURE Tj ( C)
150
I S - VSD
1
VGS=1V 0.1
VGS=0V 0.01
0.0 0.3 0.6 0.9 1.2 1.5 BODY DIODE FORWARD VOLTAGE VSD (V)
3/4
GATE-SOURCE VOLTAGE VGS (V)
2N7002K
VGS - Q g
10 COMMON SOURCE VDS=30V
8 ID=0.3A Ta=25 C
6
4
2
0 0246 8 GATE CHARGE Q g (nC)
10
SOA
10 Tj=150 C , Ta=25 C ,Single Pulse,Package mounted
1 on a a glass epoxy PCB(100mm2 1mm)
PW 10
0.1 0.01 0.001
PW =1ms
PW =10ms PW =100ms DC
0.0001
0.001 0.01
0.1
1
10
DRAIN-SOURCE VOLTAGE VDS (V)
100
DRAIN POWER DISSIPATION P D (mW)
CAPACITANCE C (pF)
1000 100
C - VDS
COMMON SOURCE VGS =0V f=1MHz Ta=25 C
C iss
10
1 0
C oss C rss
5 10 15 20 DRAIN-SOURCE VOLTAGE VDS (V)
25
350
300 250 200 150 100 50
0 0
P D - Ta
20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C)
DRAIN CURRENT ID (A)
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Revision No : 2
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