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2N7002K Dataheets PDF



Part Number 2N7002K
Manufacturers KEC
Logo KEC
Description N Channel MOSFET
Datasheet 2N7002K Datasheet2N7002K Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS 20 Continuous ID 300 Drain Current Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 300 Junction Temperature Tj 150 Storage Tempe.

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS 20 Continuous ID 300 Drain Current Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) UNIT V V mA mW EQUIVALENT CIRCUIT D G A G H D 2N7002K N Channel MOSFET ESD Protected 2000V E L BL 23 1 PP M 1. SOURCE 2. GATE 3. DRAIN DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 C N K J Marking WCType Name Lot No. S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse SYMBOL BVDSS IDSS IGSSF IGSSR TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V MIN. 60 - TYP. - MAX. 1 10 -10 UNIT V A A A 2009. 11. 17 Revision No : 2 1/4 2N7002K ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL Gate Threshold Voltage Vth Drain-Source ON Resistance RDS(ON) Drain-Source ON Voltage VDS(ON) On State Drain Current Forward Transconductance ID(ON) gFS Drain-Source Diode Forward Voltage VSD Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1% TEST CONDITION VDS=VGS, ID=250 A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, VDS= 2 VDS(ON) VDS=10V, ID=500mA VGS=0V, IS=200mA (Note1) MIN. 1.1 500 200 - TYP. 1.2 1.5 0.6 0.075 - 580 760 MAX. 2.35 1.8 2.1 0.9 0.105 1150 UNIT V V mA mS mV DYNAMIC CHARACTERISTICS CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-On Time Turn-Off Time SYMBOL Ciss Crss Coss ton toff TEST CONDITION VDS=25V, VGS=0V, f=1MHz VDD=30V, RL=155 , ID=190mA, VGS=10V MIN. - TYP. 52.1 3.9 7.7 11.1 22.5 MAX. - UNIT pF nS SWITCHING TIME TEST CIRCUIT VGS VDD RL VIN D VOUT G S td(on) ton tr 90% td(off) toff tf 90% OUTPUT VOUT 10% INVERTED 90% INPUT VIN 10% 50% PULSE WIDTH 50% 2009. 11. 17 Revision No : 2 2/4 2N7002K DRAIN CURRENT ID (A) ID - VDS 1.5 COMMON SOURCE Ta = 25 C 1.2 0.9 7V 10V 6V 0.6 5V 4V 0.3 0.0 0.0 VGS = 3V 1.0 2.0 3.0 4.0 DRAIN-SOURCE VOLTAGE VDS (V) 5.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 RDS(ON) - Tj VGS=5V ID=50mA VGS=10V ID=500mA -50 0 50 100 JUNCTION TEMPERATURE Tj ( C) 150 DRAIN SOURCE ON - RESISTANCE RDS ( ) DRAIN CURRENT ID (A) ID - VGS 1.0 COMMON SOURCE VDS =10V 0.8 0.6 -55 C 25 C 125 C 0.4 0.2 0.0 0 1234 DRAIN-SOURCE VOLTAGE VGS (V) 5 2009. 11. 17 Revision No : 2 REVERSE DRAIN CURRENT I S (A) NORMALIZED GATE GATE SOURCE THRESHOLDVOLTAGE Vth (V) DRAIN SOURCE ON - RESISTANCE RDS ( ) 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.1 RDS(ON) - ID COMMON SOURCE Ta = 25 C VGS = 3V 4V 5V 6V 7V 10V 0.2 0.3 0.4 0.5 DRAIN-CURRENT ID (A) 0.6 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -100 Vth - Tj Common Source VGS=VDS ID=250µA -50 0 50 100 JUNCTION TEMPERATURE Tj ( C) 150 I S - VSD 1 VGS=1V 0.1 VGS=0V 0.01 0.0 0.3 0.6 0.9 1.2 1.5 BODY DIODE FORWARD VOLTAGE VSD (V) 3/4 GATE-SOURCE VOLTAGE VGS (V) 2N7002K VGS - Q g 10 COMMON SOURCE VDS=30V 8 ID=0.3A Ta=25 C 6 4 2 0 0246 8 GATE CHARGE Q g (nC) 10 SOA 10 Tj=150 C , Ta=25 C ,Single Pulse,Package mounted 1 on a a glass epoxy PCB(100mm2 1mm) PW 10 0.1 0.01 0.001 PW =1ms PW =10ms PW =100ms DC 0.0001 0.001 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE VDS (V) 100 DRAIN POWER DISSIPATION P D (mW) CAPACITANCE C (pF) 1000 100 C - VDS COMMON SOURCE VGS =0V f=1MHz Ta=25 C C iss 10 1 0 C oss C rss 5 10 15 20 DRAIN-SOURCE VOLTAGE VDS (V) 25 350 300 250 200 150 100 50 0 0 P D - Ta 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) DRAIN CURRENT ID (A) 2009. 11. 17 Revision No : 2 4/4 .


2N7002K 2N7002K B0520LW


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