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B0530W

Taiwan Semiconductor

Low VF SMD Schottky Barrier Diode

Small Signal Product B0520LW,B0530W,B0540W Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES - Low pow...


Taiwan Semiconductor

B0530W

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Description
Small Signal Product B0520LW,B0530W,B0540W Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) SOD-123 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL B0520LW B0530W Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current @ TL=100oC (Lead Temperature) Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) (Note 2) PD VRRM VR IO IFSM RθJA 20 14 410 30 21 500 5.5 244 Junction and Storage Temperature Range TJ , TSTG -55 to +125 Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load Notes: 2. Valid provided that electrodes are kept at ambient temperature B0540W 40 28 UNIT mW V V mA A oC/W oC PARAMETER Reverse Breakdown Voltage (Minimum Value) IR=250μA IR=130μA IR=20μA Forward Voltage (Maximum Value) IF=100mA IF=500mA IF=1000mA VR = 10V Reverse Leakage Current (Maximum Value) VR = 15V VR ...




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