DatasheetsPDF.com

1R5JH45

Toshiba Semiconductor

Silicon Rectifier

TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5JH45 1R5JH45 SWITCHING MODE POWER SUPPLY APPLICATIONS Unit: ...


Toshiba Semiconductor

1R5JH45

File Download Download 1R5JH45 Datasheet


Description
TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5JH45 1R5JH45 SWITCHING MODE POWER SUPPLY APPLICATIONS Unit: mm l Repetitive Peak Reverse Voltage l Average Forward Current l Very Fast Reverse−Recovery Time : VRRM = 600V : IF (AV) = 1.5A : trr = 200ns (MAX.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current (Ta = 25°C) Peak One Cycle Surge Forward Current (Non−Repetitive) Junction Temperature Range Storage Temperature Range SYMBOL VRRM IF (AV) IFSM Tj Tstg RATING 600 1.5 50 (50Hz) 55 (60Hz) −40~150 −40~150 ELECTRICAL CHARACTERISTICS (Ta = 25°C) UNIT V A A °C °C JEDEC JEITA TOSHIBA Weight: 0.47g ― ― 3−4B1A CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Forward Recovery Time Thermal Resistance SYMBOL TEST CONDITION VFM IFM = 1.5A IRRM VRRM = 600V trr tfr Rth (j−a) IF = 1A, di / dt = −30A / µs IF = 1.0A Junction to Ambient MIN TYP. MAX UNIT ― ― 1.2 V ― ― 100 µA ― ― 200 ns ― ― 500 ns ― ― 58 °C / W Marking 1 2001-07-09 1R5JH45 2 2001-07-09 1R5JH45 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe desig...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)