Schottky Diodes. SD103CW Datasheet

SD103CW Diodes. Datasheet pdf. Equivalent


Vishay SD103CW
www.vishay.com
SD103AW, SD103BW, SD103CW
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
• The SD103 series is a metal-on-silicon Schottky barrier
device which is protected by a PN junction guardring
• For general purpose applications
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
SD103AW
SD103BW
SD103CW
ORDERING CODE
SD103AW-E3-08 or SD103AW-E3-18
SD103AW-HE3-08 or SD103AW-HE3-18
SD103BW-E3-08 or SD103BW-E3-18
SD103BW-HE3-08 or SD103BW-HE3-18
SD103CW-E3-08 or SD103CW-E3-18
SD103CW-HE3-08 or SD103CW-HE3-18
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
TYPE MARKING
S6
REMARKS
S7 Tape and reel
S8
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Power dissipation (infinite heat sink) (1)
Single cycle surge
SD103AW
SD103BW
SD103CW
10 μs square wave
VRRM
VRRM
VRRM
IF
Ptot
IFSM
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
40
30
20
350
400
2
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Operating temperature range
Storage temperature range
RthJA
Tj
Top
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
300
125
- 55 to + 125
- 55 to + 150
UNIT
V
V
V
mA
mW
A
UNIT
K/W
°C
°C
°C
Rev. 1.6, 11-Mar-13
1 Document Number: 85681
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SD103CW Datasheet
Recommendation SD103CW Datasheet
Part SD103CW
Description Small Signal Schottky Diodes
Feature SD103CW; www.vishay.com SD103AW, SD103BW, SD103CW Vishay Semiconductors Small Signal Schottky Diodes MECHA.
Manufacture Vishay
Datasheet
Download SD103CW Datasheet




Vishay SD103CW
www.vishay.com
SD103AW, SD103BW, SD103CW
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
VR = 30 V
VR = 20 V
VR = 10 V
IF = 20 mA
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
SD103AW
SD103BW
SD103CW
IR
IR
IR
VF
VF
CD
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
1000
100
10
1
0.1
0.01
0
18488
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1.0
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
1000
100
10
1
0.1
Tamb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0
20084
5 10 15 20 25 30 35 40 45 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
5
4 tp = 300 ms
duty cycle = 2 %
3
2
1
0
0
18489
0.5 1.0
VF - Forward Voltage (V)
1.5
Fig. 2 - Typical High Current Forward Conduction Curve
100
10
1
0
18491
10 20 30 40
VR - Reverse Voltage (V)
50
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.6, 11-Mar-13
2 Document Number: 85681
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SD103CW
www.vishay.com
SD103AW, SD103BW, SD103CW
Vishay Semiconductors
50
40
30
I F = 400 mA
20
100 mA
200 mA
10
0
0
18492
100 200
Tamb - Ambient Temperature (°C)
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
2.5 (0.098)
Rev. 1.6, 11-Mar-13
3 Document Number: 85681
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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