Production specification
Schottky Barrier Diode
SD103AW/SD103BW/SD103CW
FEATURES
z Low Forward Voltage Drop. z Guard ...
Production specification
Schottky Barrier Diode
SD103AW/SD103BW/SD103CW
FEATURES
z Low Forward Voltage Drop. z Guard Ring Construction For Transient
Protection.
z Negligible Reverse Recovery Time.
z Low Reverse Capacitance.
Pb
Lead-free
APPLICATIONS
z Schotty barrier switching.
SOD-123
ORDERING INFORMATION
Type No.
Marking
SD103AW SD103BW SD103CW
S4 S5 S6
Package Code
SOD-123 SOD-123 SOD-123
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol SD103AW SD103BW SD103CW Unit
Peak Repetitive Peak reverse voltage
VRR
Working Peak DC Reverse Voltage
VRWM
40
30
20
V
VR
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current
IF 350
mA
Repetitive Peak Forward Current @t≤1.0s Power Dissipation Thermal Resistance Junction to Ambient Storage temperature
IFRM Pd RθjA Tstg
1.5 400 300 -65 to +125
A mW ℃/W ℃
A014 Rev.A
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Production specification
Schottky Barrier Diode
SD103AW/SD103BW/SD103CW
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Reverse Breakdown Voltage
SD103AW SD103BW SD103CW
Forward voltage
Reverse current
SD103AW SD103BW SD103CW
Capacitance between terminals
Reverse Recovery Time
Symbol Min.
V(BR)R
40 30 20
VF
IRM
CT trr
Typ.
50 10
Max. Unit
V
0.37 0.60
V
5.0 μA
pF ns
Conditions
IR=10μA IR=10μA IR=10μA IF=20mA IF=200mA VR=30V VR=20V VR=10V
VR=0,f=1MHz
IR=IF=200mA Irr=0.1*IR,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
A01...