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B0530WS

Taiwan Semiconductor

SMD Schottky Barrier Diode

B0530WS Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Fast switching dev...


Taiwan Semiconductor

B0530WS

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B0530WS Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Fast switching device(trr<4.0nS) - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: Flat lead SOD-323 small outline plastic package - Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight : 4.85 ± 0.5 mg SOD-323F MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Peak Repetitive Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance form Junction to Ambient Junction Temperature Storage Temperature Range VRRM IO IFSM PD RthjA TJ TSTG 30 500 5 200 426 125 - 65 to + 125 UNIT V mA A mW oC/W oC oC PARAMETER Reverse Breakdown Voltage Reverse Leakage Current Forward Voltage Junction Capacitance TEST CONDITION at IR = 500µA at VR = 15 V at VR = 20 V at VR = 30 V at IF = 100mA at IF = 500mA VR=0, f=1.0MHz SYMBOL V(BR) IR VF CJ MIN 30 ---- -- MAX 80 100 500 0.36 0.47 58 UNIT V µA V pF Document Number: DS_S1405006 Version: G14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) ...




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