TXY8205

TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35mΩ@VGS=2.5V ID 6A 4A Green Product Pin Description FEATURES High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Current (continuous) at TC = 100 ℃ IDM (b) Drain Current (pulsed) Ptot Total Dissipation at TC = 25　℃ Tstg Storage Temperature Tj Max. Operating Junction Temperature (a) Current limited by package (b) Pulse width limited by safe operating area THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient www.tmos.com.tw 1 TSOP 6 / SOT 23-6 Value 20 ±12V 6 2.4 24 1.25 - 55~175 Unit V V A A A W ℃ Max 100 ℃ /W DS-Rev-1.0 TXY8205 ELECTRICAL CHARACTERISTICS (Tcase = 25 ℃ unless otherwise specified) OFF Symbol Parameter Test Conditions Min Typ Max Unit BVDSS Drain-source Breakdown Voltage ID = 250 uA , VGS = 0V 20 V IDSS Zero Gate Voltage Drain Current (VGS = 0V) VDS = 16V 1 uA IGSS Current (VDS = 0V) VGS =± 12V ±100 nA ON Symbol Parameter Test Conditions Min Typ Max Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250uA 0.5 0.7 1.2 V RDS(on) Static Drain-source On Resistance VGS = 4.5V , ID =6A VGS = 2.5V , ID =5A 23 25 mΩ 34 40 mΩ DYNAMIC Symbol Parameter Test Conditions Min T...