Trench MOSFET. TXY8205 Datasheet

TXY8205 MOSFET. Datasheet pdf. Equivalent

TXY8205 Datasheet
Recommendation TXY8205 Datasheet
Part TXY8205
Description Dual N-CHANNEL High Density Trench MOSFET
Feature TXY8205; TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35.
Manufacture TMOS
Datasheet
Download TXY8205 Datasheet




TMOS TXY8205
TXY8205
Dual N CHANNEL High Density Trench MOSFET
TYPE
TXY8205
BVDSS
20V
RDS(ON)
25m@VGS=4.5V
35m@VGS=2.5V
ID
6A
4A
Green Product
Pin Description
FEATURES
High Density cell trench design for low Rds(on)
Rugged and reliable
Surface Mount package
Lead Free Available(Green Product)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDSS
Drain-Source Voltage ( VGS=0V )
VGSS
Gate- source Voltage
ID (a)
Drain Current (continuous) at TC = 25
ID Drain Current (continuous) at TC = 100
IDM (b)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25 ℃
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(a) Current limited by package
(b) Pulse width limited by safe operating area
THERMAL DATA
Rthj-amb
Thermal Resistance Junction-ambient
www.tmos.com.tw
1
TSOP 6 / SOT 23-6
Value
20
±12V
6
2.4
24
1.25
- 55~175
Unit
V
V
A
A
A
W
Max 100
/W
DS-Rev-1.0



TMOS TXY8205
TXY8205
ELECTRICAL CHARACTERISTICS (Tcase = 25 unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min Typ Max Unit
BVDSS
Drain-source
Breakdown Voltage
ID = 250 uA , VGS = 0V
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0V)
VDS = 16V
1 uA
IGSS
Current (VDS = 0V)
VGS 12V
±100 nA
ON
Symbol
Parameter
Test Conditions
Min Typ Max Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS , ID = 250uA
0.5 0.7 1.2 V
RDS(on)
Static Drain-source On Resistance
VGS = 4.5V , ID =6A
VGS = 2.5V , ID =5A
23 25 m
34 40 m
DYNAMIC
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Ciss Input Capacitance
595 PF
Coss
Output Capacitance
VDS = 10V , f = 1 MHz , VGS=0V
140 PF
Crss
Reverse Transfer Capacitance
125 PF
www.tmos.com.tw
2
DS-Rev-1.2



TMOS TXY8205
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td ( on )
Turn-on Delay Time
VDD =10V , ID = 6A , Rg=3
tr Rise Time
VGS =4.5V
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 10V , ID =6 A , VGS = 4.5V
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
Test Conditions
td (off)
Turn-off Delay Time
VDD = 10V , ID =6A , Rg=3
tf Fall Time
VGS =4.5V
SOURCE DRAIN DIODE
Symbol
Parameter
IS Continuous source-drain diode
current
Trr Body diode reverse recovery Time
Qrr Body diode reverse recovery
charge
VSD
Forward On Voltage
Test Conditions
TC= 25
IF=6A , di/dt = 100A/us , Tj=25
ISD =1.0 A , VGS = 0V
TXY8205
Min Typ Max Unit
3.5 ns
13.5 ns
21 nc
1.3 nc
3.3 nc
Min Typ Max Unit
32 ns
6.6 ns
Min Typ Max Unit
6A
14 nS
5 nC
0.78 1.2
V
www.tmos.com.tw
3
DS-Rev-1.2







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