Trench MOSFET. TXY8205A Datasheet


TXY8205A MOSFET. Datasheet pdf. Equivalent


TXY8205A


Dual N-CHANNEL High Density Trench MOSFET
Dual N-Channel High Density Trench MOSFET  N 

TYPE


BVDSS
-

TXY8205A

20V

ID

6A

RDS(ON) (Typ.)
 ()
23mΩ @VGS=4.5V 34mΩ @VGS=2.5V

FEATURES 
High density cell trench design for low RDS(ON)  Rugged and reliable  Surface mount package  Lead Free available(Green Product) 
PIN CONFIGURATION 

TXY8205A

ORDERING INFORMATION 

Device

Package





TXY8205A

TSSOP-8

Packing

Tape Reel

www.tmos.com.tw

1

DS-Rev-1.4

TXY8205A

ABSOLUTE MAXIMUM RATINGS  (TA = 25 ℃ unless otherwise specified)

Symbol

Parameter

Value







VDSS

Drain-Source Voltage (VGS=0V ) -

20

VGSS ID (a)

Gate- source Voltage - Drain Current (continuous) 

at TC = 25℃ at TC = 70℃

±12
6 4

IDM (b)

Drain Current (pulsed) 

28

Power Dissipation Ptot


2.0

Tj , Tstg

Operating Junction and Storage Temperature Range 

- 55~150

(a) Current limited by package  (b) Pulse test: Pulse width≦300us, duty cycle≦2% :≦300us≦2%

THERMAL DATA 

RθJA

Thermal Resistance – Junction to Ambient -

62.5

Unit 
V
A W ℃
℃ /W

ELECTRICAL CHARACTERISTICS  (TA = 25 ℃ unless otherwise specified)
OFF

Symbol 

Parameter 

Test Conditions 

Min 

Typ 

BVDSS

Drain-source Breakdown Voltage -

ID = 250 uA , VGS = 0V

20 --

Zero Gate Voltage Drain Current

IDSS

VDS = 16V



-- --

Gate-Body Leakage Current

IGSS

VGS =±12V



-- --

Max 
--
1
±100

Unit 
V
uA
nA

www.tmos.com.tw

2

DS-Rev-1.4

ELECTRICAL CHARACTERISTICS  (contin...



TXY8205A
Dual N-Channel High Density Trench MOSFET
N 沟道高密度场效应晶体管
TYPE
器件型号
BVDSS
-源极电压
TXY8205A
20V
ID
电流
6A
RDS(ON) (Typ.)
导通电阻 (典型值)
23@VGS=4.5V
34@VGS=2.5V
FEATURES 特点
High density cell trench design for low RDS(ON)
高密度沟槽式单元超低导通电阻设计
Rugged and reliable
坚固可靠
Surface mount package
表面黏着包装形式
Lead Free available(Green Product)
无铅或绿色产品
PIN CONFIGURATION 管脚说明及内部电路图
TXY8205A
ORDERING INFORMATION 订购信息
Device
Package
器件名称
封装形式
TXY8205A
TSSOP-8
Packing
包装形式
Tape Reel
www.tmos.com.tw
1
DS-Rev-1.4

TXY8205A
TXY8205A
ABSOLUTE MAXIMUM RATINGS 绝对最大额定值 (TA = 25 unless otherwise specified)
Symbol
Parameter
Value
符号
参数描述
最大限定值
VDSS
Drain-Source Voltage (VGS=0V )
漏极-源极击穿电压
20
VGSS
ID (a)
Gate- source Voltage
栅极-源极击穿电压
Drain Current (continuous)
连续漏极电流
at TC = 25
at TC = 70
±12
6
4
IDM (b)
Drain Current (pulsed)
浪涌漏极电流
28
Power Dissipation
Ptot
功耗
2.0
Tj , Tstg
Operating Junction and Storage Temperature Range
工作与储存温度
- 55~150
(a) Current limited by package 包装之电流极限
(b) Pulse test: Pulse width300us, duty cycle2% 脉冲测试:脉冲宽度≦300us,占空比≦2
THERMAL DATA 热特性
RθJA
Thermal Resistance Junction to Ambient
-环境热阻
62.5
Unit
单位
V
A
W
/W
ELECTRICAL CHARACTERISTICS 电器特性 (TA = 25 unless otherwise specified)
OFF
Symbol
符号
Parameter
参数描述
Test Conditions
测试条件
Min
最小值
Typ
典型值
BVDSS
Drain-source Breakdown Voltage
漏极-源极击穿电压
ID = 250 uA , VGS = 0V
20 --
Zero Gate Voltage Drain Current
IDSS
VDS = 16V
零栅电压漏极电流
-- --
Gate-Body Leakage Current
IGSS
VGS =±12V
栅极泄漏电流
-- --
Max
最大值
--
1
±100
Unit
单位
V
uA
nA
www.tmos.com.tw
2
DS-Rev-1.4




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