Dual N-CHANNEL High Density Trench MOSFET
Dual N-Channel High Density Trench MOSFET N
TYPE
BVDSS
-
TXY8205A
20V
ID
6A
RDS(ON) (Typ.)
()
23mΩ @VGS=4.5V ...
Description
Dual N-Channel High Density Trench MOSFET N
TYPE
BVDSS
-
TXY8205A
20V
ID
6A
RDS(ON) (Typ.)
()
23mΩ @VGS=4.5V 34mΩ @VGS=2.5V
FEATURES
High density cell trench design for low RDS(ON) Rugged and reliable Surface mount package Lead Free available(Green Product)
PIN CONFIGURATION
TXY8205A
ORDERING INFORMATION
Device
Package
TXY8205A
TSSOP-8
Packing
Tape Reel
www.tmos.com.tw
1
DS-Rev-1.4
TXY8205A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ℃ unless otherwise specified)
Symbol
Parameter
Value
VDSS
Drain-Source Voltage (VGS=0V ) -
20
VGSS ID (a)
Gate- source Voltage - Drain Current (continuous)
at TC = 25℃ at TC = 70℃
±12
6 4
IDM (b)
Drain Current (pulsed)
28
Power Dissipation Ptot
2.0
Tj , Tstg
Operating Junction and Storage Temperature Range
- 55~150
(a) Current limited by package (b) Pulse test: Pulse width≦300us, duty cycle≦2% :≦300us,≦2%
THERMAL DATA
RθJA
Thermal Resistance – Junction to Ambient -
62.5
Unit
V
A W ℃
℃ /W
ELECTRICAL CHARACTERISTICS (TA = 25 ℃ unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min
Typ
BVDSS
Drain-source Breakdown Voltage -
ID = 250 uA , VGS = 0V
20 --
Zero Gate Voltage Drain Current
IDSS
VDS = 16V
-- --
Gate-Body Leakage Current
IGSS
VGS =±12V
-- --
Max
--
1
±100
Unit
V
uA
nA
www.tmos.com.tw
2
DS-Rev-1.4
ELECTRICAL CHARACTERISTICS (continued)
ON
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS , ID = ...
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