POWER MOSFET. IRFBA22N50APBF Datasheet

IRFBA22N50APBF MOSFET. Datasheet pdf. Equivalent

IRFBA22N50APBF Datasheet
Recommendation IRFBA22N50APBF Datasheet
Part IRFBA22N50APBF
Description POWER MOSFET
Feature IRFBA22N50APBF; SMPS MOSFET PD-95905 IRFBA22N50APbF Applications l Switch Mode Power Supply ( SMPS ) l Uninterrup.
Manufacture International Rectifier
Datasheet
Download IRFBA22N50APBF Datasheet




International Rectifier IRFBA22N50APBF
SMPS MOSFET
PD-95905
IRFBA22N50APbF
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptible Power Supply
l High Speed Power Switching
l Lead-Free
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max
0.23
ID
24A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN1001)
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Super-220™
(TO-273AA)
Max.
24
15
96
340
2.7
± 30
3.4
-55 to + 150
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Applicable Off Line SMPS Topologies:
l Full Bridge Converters
l Power Factor Correction Boost
Notes  through … are on page 8
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1
09/15/04



International Rectifier IRFBA22N50APBF
IRFBA22N50APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
2.0
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
Max.
–––
0.23
4.0
25
250
100
-100
Units
V
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 13.8A „
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
12 ––– ––– S VDS = 50V, ID = 13.8A
––– ––– 115
ID = 23A
––– ––– 30 nC VDS = 400V
––– ––– 50
VGS = 10V, See Fig. 6 and 13 „
––– 20 –––
VDD = 250V
––– 66 ––– ns ID = 23A
––– 46 –––
RG = 4.3
––– 44 –––
RD = 10.6,See Fig. 10 „
––– 3400 –––
VGS = 0V
––– 500 –––
VDS = 25V
––– 17 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 4900 –––
––– 130 –––
––– 150 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
1200
24
34
Units
mJ
A
mJ
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
–––
0.50
–––
Max.
0.37
–––
58
Units
°C/W
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 23
––– ––– 92
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5
––– 500 750
––– 6.4 9.6
V TJ = 25°C, IS = 23A, VGS = 0V „
ns TJ = 25°C, IF = 23A
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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International Rectifier IRFBA22N50APBF
IRFBA22N50APbF
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ= 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
V DS = 50V
20µs PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 ID = 23A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3







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