P-Channel MOSFET. BS250KL Datasheet

BS250KL MOSFET. Datasheet pdf. Equivalent

BS250KL Datasheet
Recommendation BS250KL Datasheet
Part BS250KL
Description P-Channel MOSFET
Feature BS250KL; New Product TP0610KL/BS250KL Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)D.
Manufacture Vishay
Datasheet
Download BS250KL Datasheet




Vishay BS250KL
New Product
TP0610KL/BS250KL
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
60
rDS(on) (W)
6 @ VGS = 10 V
10 @ VGS = 4.5 V
VGS(th) (V)
1 to 3.0
ID (A)
0.27
0.21
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
TO-226AA
(TO-92)
S1
G2
D3
Top View
Device Marking
Front View
“S” TP
0610KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Ordering Information: TP0610KL-TR1
TO-92-18RM
(TO-18 Lead Form)
D1
G2
S3
Top View
Device Marking
Front View
“S” BS
250KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Ordering Information: BS250KL-TR1
100 W
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulse Drain Currenta
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
60
"20
0.27
0.22
1.0
0.8
0.51
156
55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
Unit
V
A
W
_C/W
_C
www.vishay.com
1



Vishay BS250KL
TP0610KL/BS250KL
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 10 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "10 V
VDS = 0 V, VGS = "10 V, TJ = 85_C
VDS = 0 V, VGS = "5 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55_C
VDS = 10 V, VGS = 4.5 V
VDS = 10 V, VGS = 10 V
VGS = 4.5 V, ID = 25 mA
VGS = 10 V, ID = 500 mA
VGS = 10 V, ID = 500 mA, TJ = 125_C
VDS = 10 V, ID = 100 mA
IS = 200 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VDS = 30 V, VGS = 15 V, ID ^ 500 mA
VDD = 25 V, RL = 150 W
ID ^ 150 mA, VGEN = 10 V
Rg = 10 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
60
1
50
600
2.1
3.0
"10
"200
"500
"100
1
10
5.5
3.1
4.7
180
0.9
10
6
9
1.4
V
mA
nA
mA
mA
W
mS
V
1.7 3
0.26
nC
0.46
285 W
2.4
15.5
21
12.5
5
25
35
20
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
1.0
1200
Transfer Characteristics
VGS = 10 V
0.8 8 V
7V
0.6 6 V
TJ = 55_C
900
25_C
125_C
600
0.4
5V
300
0.2
4V
0.0
0
1234
VDS Drain-to-Source Voltage (V)
5
0
0 2 4 6 8 10
VGS Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72712
S-40244—Rev. A, 16-Feb-04



Vishay BS250KL
New Product
TP0610KL/BS250KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
On-Resistance vs. Drain Current
20
16 VGS = 4.5 V
Capacitance
40
VGS = 0 V
32
12
VGS = 5 V
8
4 VGS = 10 V
Ciss
24
16
Coss
8 Crss
0
0
15
12
9
200 400 600
ID Drain Current (mA)
800
Gate Charge
1000
ID = 500 mA
VDS = 30 V
VDS = 48 V
6
3
0
0 5 10 15 20 25
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.5
VGS = 10 V @ 500 mA
1.2
0.9 VGS = 4.5 V @ 25 mA
0.6
0.3
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8
Qg Total Gate Charge (nC)
1000
Source-Drain Diode Forward Voltage
VGS = 0 V
100
TJ = 125_C
0.0
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-Source Voltage
10
8 ID = 500 mA
6
10 TJ = 25_C
TJ = 55_C
1
0.00
0.3 0.6
0.9 1.2
VSD Source-to-Drain Voltage (V)
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
1.5
4
ID = 200 mA
2
0
0 2 4 6 8 10
VGS Gate-to-Source Voltage (V)
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