BS250KL

New Product TP0610KL/BS250KL Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −60 rDS(on) (W) 6 @ VGS = −10 V 10 @ VGS = −4.5 V VGS(th) (V) −1 to −3.0 ID (A) −0.27 −0.21 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S1 G2 D3 Top View Device Marking Front View “S” TP 0610KL xxyy “S” = Siliconix Logo xxyy = Date Code Ordering Information: TP0610KL-TR1 TO-92-18RM (TO-18 Lead Form) D1 G2 S3 Top View Device Marking Front View “S” BS 250KL xxyy “S” = Siliconix Logo xxyy = Date Code Ordering Information: BS250KL-TR1 100 W G D S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM PD RthJA TJ, Tstg −60 "20 −0.27 −0.22 −1.0 0.8 0.51 156 −55 to 150 Notes a. Pulse width limited by maximum junction temperature. Document Number: 72712 S-40244—Rev. A, 16-Feb-04 Unit V A W _C/W _C www.vishay.com 1 TP0610KL/BS250KL Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage ...